ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices

Chang, Jae-Soo; Song, J. S.; Godo, Kenji; Yao, Takafumi; Shen, Mengyan; Goto, T.

doi:10.1063/1.1343475

Cited by 31 publications

(17 citation statements)

References 10 publications

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“…The transition energy and thus the emission spectrum of the nanostructures can be modified statically and dynamically. For static (permanent) methods, the eigenstates and thus transition energies can be tuned by modifying the composition of the compound semiconductors from binary to ternary such as Zn x Cd 1−x Se [11] and Zn x Mg 1−x Se [12] or more complicated compositions such as Zn x Mg 1−x Se y Te 1−y [13] and Zn x Cd y Mg 1−x−y Se [14]. Besides, the quantum confinement structures of quantum dots [15] and quantum wells (see, for example, [16,17]) have been used to adjust the transition energies.…”

Section: Introductionmentioning

confidence: 99%

Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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ZnSe nanowires and nanobelts with zinc blende structure have been synthesized. The morphology and the growth mechanisms of the ZnSe nanostructures will be discussed. From the photoluminescence (PL) of the ZnSe nanostructures, it is interesting to note that red color emission with only a single peak at the photon energy of 2 eV at room temperature is obtained while the typical bandgap transition energy of ZnSe is 2:7 eV. When the temperature is reduced to 150 K, the peak wavelength shifts to 2:3 eV with yellowish emission and then blue emission with the peak at 2:7 eV at temperature less than 50 K. The overall wavelength shift of 700 meV is obtained as compared to the conventional ZnSe of about 100 meV (i.e., sevenfold extension). The ZnSe nanostructures with enhanced wavelength shift can potentially function as visible light temperature-indicator. The color change from red to yellowish and then to blue is large enough for the nanostructures to be used for temperature-sensing applications. The details of PL spectra of ZnSe at various temperatures are studied from (i) the spectral profile, (ii) the half-width half-maximum, and (iii) the peak photon energy of each of the emission centers. The results show that the simplified configuration coordinate model can be used to describe the emission spectra, and the frequency of the local vibrational mode of the emission centers is determined.

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Section: Introductionmentioning

confidence: 99%

Largely extended light-emission shift of ZnSe nanostructures with temperature

Choy¹,

Leung²

2011

Appl. Opt.

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“…Optically pumped lasing in the yellow-green region has been achieved in such structures both at liquid nitrogen [2] and at room [3] temperatures. Moreover, recently ZnCdTe/ZnTe p-n junction light emitted diodes and ZnCdTe/MgZnSeTe laser diodes were successfully demonstrated [4,5].…”

Section: Introductionmentioning

confidence: 99%

Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Borkovska

Korsunska

Sadofyev

et al. 2007

Physica Status Solidi (b)

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.65. Fg, 78.47.+p, 78.55.Et, 78.67.De, 81.15.Hi In present work, the influence of single monolayer CdTe film insertion on the luminescence and structural characteristics of CdZnTe/ZnTe quantum well (QW) was investigated by the photoluminescence (PL) and the high resolution X-ray diffraction (HRXRD) methods. The structures were grown by MBE on GaAs substrate and contained Cd 0.4 Zn 0.6 Te QW of 8 nm thickness with or without 1 monolayer CdTe film embedded in the middle of QW. The low temperature PL investigations showed that insertion of CdTe layer resulted in a "blue" shift of the QW PL peak position, in the two times narrowing of the QW PL band and one order of value increase of its intensity. Temperature dependencies of the QW PL spectra as well as time-resolved PL investigations indicated that these changes are caused by the increase of shallow localized state density and the decrease of deep one. The degradation of interface quality as well as the change of the QW composition were found by the HRXRD profiles.

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“…Thus far, the ZnTe-based materials have been studied by some research groups. For example, growth and characterization of homo-epitaxial ZnTe [2], MgZnSeTe quaternaries [3], quantum well structures [4], and yellow-to-green LEDs [5][6][7] were reported. However, no lasing operation had been achieved though such so many efforts had been made.…”

Section: Introductionmentioning

confidence: 99%

Yellow–green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates

Nomura

Manoshiro

Kikuchi

et al. 2006

Physica Status Solidi (b)

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ZnCdTe/MgZnSeTe laser diodes (LDs) were fabricated on ZnTe substrates by molecular beam epitaxy. The LDs were characterized under single short pulse current injections at low temperature. Yellow -green single-mode lasing emissions at 564 nm were successfully obtained, for the first time. The threshold current density (J th ) at 100 K was 2.8 kA/cm 2 . The full width at half maximum value of the lasing emission peak was 1.1 meV (0.29 nm). From the temperature dependency of the J th , it was confirmed that the lasing operations were obtained up to 170 K. The characteristic temperature value was estimated to be 228 K.

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ZnCdTe/ZnTe/ZnMgSeTe quantum-well structures for the application to pure-green light-emitting devices

Cited by 31 publications

References 10 publications

Largely extended light-emission shift of ZnSe nanostructures with temperature

Largely extended light-emission shift of ZnSe nanostructures with temperature

Modification of the photoluminescence characteristics of CdZnTe/ZnTe QWs by CdTe monolayer film insertion

Yellow–green lasing operations of ZnCdTe/MgZnSeTe laser diodes on ZnTe substrates

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