Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening

Tüzün, Ö.; Qiu, Yu; Slaoui, A.; Gordon, Ivan; Maurice, Claire; Venkatachalam, Srisaran; Chatterjee, Somenath; Beaucarne, G.; Poortmans, Jef

doi:10.1016/j.solmat.2010.06.031

Cited by 27 publications

(12 citation statements)

References 2 publications

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“…For the sample S5, the stress is then raising strongly to reach 700 MPa. The stress in the layer can be induced by the grain boundaries which are known to compressively stress the pc-Si films [13]. The increase of the compressive stress is then correlated to the decrease of the grains size.…”

Section: Optical and Structural Analyses Of The Pc-si Layersmentioning

confidence: 99%

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Thin film pc-Si by aluminium induced crystallization on metallic substrate

et al. 2013

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Thin film polycrystalline silicon (pc-Si) on flexible metallic substrates is promising for low cost production of photovoltaic solar cells. One of the attractive methods to produce pc-Si solar cells consists in thickening a large-grained seed layer by epitaxy. In this work, the deposited seed layer is made by aluminium induced crystallization (AIC) of an amorphous silicon (a-Si) thin film on metallic substrates (Ni/Fe alloy) initially coated with a tantalum nitride (TaN) conductive diffusion barrier layer. Effect of the thermal budget on the AIC grown pc-Si seed layer was investigated in order to optimize the process (i.e. the quality of the pc-Si thin film). Structural and optical characterizations were carried out using optical microscopy, μ-Raman and Electron Backscatter Diffraction (EBSD). At optimal thermal annealing conditions, the continuous AIC grown pc-Si thin film showed an average grain size around 15 μm. The grains were preferably (001) oriented which is favorable for its epitaxial thickening. This work proves the feasibility of the AIC method to grow large grains pc-Si seed layer on TaN coated metal substrates. These results are, in terms of grains size, the finest obtained by AIC on metallic substrates.

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Section: Optical and Structural Analyses Of The Pc-si Layersmentioning

confidence: 99%

“…As substrate's candidates, ceramic or glass ceramic insulating materials have been previously suggested [1][2][3] Nevertheless, metallic foils can offer similar and additional advantages. They are cheap, thermally stable and flexible thus they can be rolled.…”

Section: Introductionmentioning

confidence: 99%

Thin film pc-Si by aluminium induced crystallization on metallic substrate

et al. 2013

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“…29) However, in an Al-Ge system, the resulting Ge layer shows a high hole concentration of p = 2 × 10 20 cm -3 owing to the residual Al atoms in Ge activated as acceptors. 25) Although poly-Ge is useful for a p-type layer in solar cells, 12) it cannot be used as an active layer for transistors. On the other hand, in a Au-Ge system, the resulting Ge layer shows relatively good electrical properties (p = 2 × 10 17 cm -3 and hole mobility: 25) This has allowed for the formation of a thin-film transistor by an all-lowtemperature process.…”

Section: Introductionmentioning

confidence: 99%

Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

Yoshimine¹,

Toko²,

Suemasu³

2017

Jpn. J. Appl. Phys.

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Metal-induced layer exchange (MILE) is an advanced crystallization technique for fabricating high-quality semiconductor thin films on insulating substrates at low temperatures. Here, we focused on Ag as a catalytic metal for crystallizing amorphous germanium thin films on glass through MILE. The layer exchange between Ag and aGe was not simple because Ag diffused into aGe so fast that it crystallized the top aGe layer before the completion of layer exchange. To suppress Ag diffusion into aGe , we explored the kind of interlayer material between them as well as the growth temperature. Preparing SiO2 and GeO2 interlayers allowed for a complete layer exchange, resulting in the formation of polycrystalline Ge thin films on glass at temperatures as low as 250 °C. These findings are essential for further understanding and controlling the layer exchange phenomenon.

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“…The thin film technology is considered in second generation of solar cell fabrication due to the reduction of raw materials and cost. Silicon (Si) based thin film solar cell has drawn a lot of attention due to its known processing technology, low process temperature and capability of large-area production [1,2]. However, improvement in the efficiency of the thin film based solar cells is a challenge for the researchers.…”

Section: Introductionmentioning

confidence: 99%

Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D

Chatterjee

Singh

Pal

2014

International Journal of Photoenergy

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Multijunction solar cells designed from silicon (Si)-germanium (Ge) alloy based semiconductor materials exhibit high theoretical efficiencies (19.6%) compared to the single junction one. The modeling calculations for all solar cells are done by AMPS 1D simulator. The structure of multi-junction i-layer is designed using heterolayers, starting from pure crystalline Si and increase of Ge mole fraction by 25% until pure Ge layer is reached. The top layer has the largest band gap, while the bottom layer has the smallest bandgap. This design allows less energetic photons to pass through the upper layer(s) and be absorbed by the layer below, which increases the overall efficiency of the solar cell. Material parameters required to model the absorber layers are calculated and incorporated in the AMPS 1D simulator for optimizing of solar cell parameter values. Simulation results show that considerable efficiency enhancement can be obtained from the addition of the multi-junction layer.

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Properties of n-type polycrystalline silicon solar cells formed by aluminium induced crystallization and CVD thickening

Cited by 27 publications

References 2 publications

Thin film pc-Si by aluminium induced crystallization on metallic substrate

Thin film pc-Si by aluminium induced crystallization on metallic substrate

Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator

Effect of Multijunction Approach on Electrical Measurements of Silicon and Germanium Alloy Based Thin-Film Solar Cell Using AMPS-1D

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