Properties of Oxidized SnO₂ Single Crystals

Abstract

The gamma-ray blazar 1611+343 was observed with polarization VLBI mode at 5 GHz in February 1999. The total intensity (I) VLBI image of the source shows a core-jet structure. The jet bends eastward at ∼ 3 mas south of the core. Four components have been detected from results of fitting, with apparent speeds estimated at 6.7 ± 0.7, 2.5 ± 0.3, 4.5 ± 0.5 h −1 c for three jet components (taking H 0 = 100 h km s −1 Mpc −1 , q 0 = 0.5). The polarization (P ) VLBI image of 1611+343 displays the polarized configuration in the jet. The mechanism of the curved jet is discussed.

Sources of Electrical Conductivity inSnO2

“…Most importantly, since H O involves removing an O atom from its lattice, its formation energy explicitly depends on the oxygen chemical potential O . H O therefore provides a consistent explanation for the unintentional n-type conductivity in SnO 2 and its variation with oxygen partial pressure [6,7]. O and H i is therefore 2.24 eV, estimated as the sum of the binding energy (1.67 eV) and the migration barrier of H i (0.57 eV).…”

“…However, as-grown SnO 2 exhibits n-type conductivity even when not intentionally doped [5][6][7][8]. We therefore focus specifically on hydrogen, which is commonly present in (and difficult to exclude from) the various growth and processing environments.…”

“…Asgrown SnO 2 generally exhibits high levels of unintentional n-type conductivity [5][6][7][8]. Because this conductivity varies inversely with the oxygen partial pressure, it has been commonly attributed to the presence of native point defects, in particular, to oxygen vacancies [3,[5][6][7].…”

Characterization of novel cation-ordered compounds with fluorite and α-PbO2 related structures prepared by oxidation of Sn–Nb–O pyrochlore

“…9. Therefore, this suggests that both oxidized Sn IV 0.81 (Nb 0.93 Sn IV 0.07 )O 4.085 cation-ordered phases with fluorite and a-PbO 2 related structures are promising TCO materials, whose conduction path is the Sn 5s states, similar to rutile SnO 2 [33][34][35] and perovskite BaSnO 3 [36]. Small reflection dips indicated by the bold arrows in Fig.…”

Semiconductor Gas Sensors Based on SnO2 Thick Films

“…It may not be an accident that the increase in sheet conductance with temperature of an argon sputtered SnOz (110) face in UHV also reaches the maximum at around 550 K [59]. According to Semancik and Fryberg [36], the oxygen deficiency of an argon sputtered SnOz (110) faces in UHV (in the AES ..…”