Sources of Electrical Conductivity in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SnO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>

Singh, Abhishek K.; Janotti, Anderson; Scheffler, Matthias; Walle, Chris G. Van de

doi:10.1103/physrevlett.101.055502

Cited by 377 publications

(273 citation statements)

References 32 publications

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“…Kılıç and Zunger [56] found that Sn-interstitials were shallow donors in SnO 2 , and furthermore had a low formation energy, causing them to attribute such defects as the probable source of conductivity in this material. Subsequent theoretical studies [57,68], however, suggested that the formation energy for isolated Sn-intersitials is actually very high for n-type material, indicating that such defect centres would be unlikely to be present in significant quantities in SnO 2 . Furthermore, their calculated migration barrier is very low [57], leading to doubts over the stability of such centres.…”

Section: Cation Interstitialsmentioning

confidence: 99%

“…Subsequent theoretical studies [57,68], however, suggested that the formation energy for isolated Sn-intersitials is actually very high for n-type material, indicating that such defect centres would be unlikely to be present in significant quantities in SnO 2 . Furthermore, their calculated migration barrier is very low [57], leading to doubts over the stability of such centres. Interstitial zinc has also been attributed as the cause of n-type conductivity in ZnO [69].…”

Section: Cation Interstitialsmentioning

confidence: 99%

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Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

225

180

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Abstract. Despite an extensive research effort for over 60 years, an understanding of the origins of conductivity in wide band-gap transparent conducting oxide (TCO) semiconductors remains elusive. While TCOs have already found widespread use in device applications requiring a transparent contact, there are currently enormous efforts to (i) increase the conductivity of existing materials, (ii) identify suitable alternatives, and (iii) attempt to gain semiconductor-engineering levels of control over their carrier density, essential for the incorporation of TCOs into a new generation of multifunctional transparent electronic devices. These efforts, however, are dependent on a microscopic identification of the defects and impurities leading to the high unintentional carrier densities present in these materials. Here, we review recent developments towards such an understanding. While oxygen vacancies are commonly assumed to be the source of the conductivity, there is increasing evidence that this is not a sufficient mechanism to explain the total measured carrier concentrations. In fact, many studies suggest that oxygen vacancies are deep, rather than shallow, donors, and their abundance in as-grown material is also debated. We discuss other potential contributions to the conductivity in TCOs, including other native defects, their complexes, and in particular hydrogen impurities. Convincing theoretical and experimental evidence is presented for the donor nature of hydrogen across a range of TCO materials, and while its stability and the presence of interstitial and substitutional species are still somewhat open questions, it is one of the leading contenders for unintentional conductivity in TCOs. We also review recent work indicating that the surfaces of TCOs can support very high carrier densities, opposite to the case of conventional semiconductors. In thin-film materials/devices and, in particular, nanostructures, the surface can have a large impact on the total conductivity in TCOs. We discuss models that attempt to explain both the bulk and surface conductivity based on features of the bulk band structure common across the TCOs, and compare these materials to other semiconductors. Finally, we briefly consider transparency in these materials, and its interplay with conductivity. Understanding this interplay, as well as the microscopic contenders for the conductivity of these materials, will prove essential to the future design and control of TCO semiconductors, and their implementation into novel multifunctional devices.

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Section: Cation Interstitialsmentioning

confidence: 99%

Section: Cation Interstitialsmentioning

confidence: 99%

Conductivity in transparent oxide semiconductors

King

Veal

2011

J. Phys.: Condens. Matter

225

180

View full text Add to dashboard Cite

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“…In this way, it is possible to have a simultaneous high carrier concentration with minor effects on transparency [3].…”

Section: Introductionmentioning

confidence: 99%

“…In fact tin oxide is a transparent conductive oxide even in its undoped state. The conductivity is due to an intrinsic non-stoichiometry, created by the presence of oxygen vacancies (V o ) and interstitial tin (Sn i ) inside the structure, which are easily tolerated due to the multivalence of tin [3,4]. Spontaneous acceptor-like intrinsic defects, like interstitial oxygen or tin vacancies are absent, therefore the electrons released by the V o or Sn i are not compensated.…”

Section: Introductionmentioning

confidence: 99%

An alternative fluorine precursor for the synthesis of SnO2:F by spray pyrolysis

2012

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“…Among those, SnO 2 exhibits a direct band gap of 3.6 eV, high exciton binding energy (130 meV) and high carrier mobility (around 250 cm 2 /Vs) [5], which makes it a promising host material for next-generation optoelectronic devices and extensively used for transparent electrodes [6]. Even solution synthesized transparent p-type conducting thin films have been previously reported by doping SnO 2 with In or In-Ga [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor

et al. 2014

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This article appeared in a journal published by Elsevier. The attached copy is furnished to the author for internal non-commercial research and education use, including for instruction at the authors institution and sharing with colleagues.Other uses, including reproduction and distribution, or selling or licensing copies, or posting to personal, institutional or third party websites are prohibited. Tin oxide is a multifunctional semiconductor that offers excellent capabilities in a variety of applications such as solar cells, catalysis and chemical sensors. In this work, tin-based semiconductors have been obtained by means of solution synthesis and inkjet, and compared to similar materials with In and Ga as additives. The effect of different thermal treatments after deposition is also studied. n-Type behavior with saturation mobility N 2 cm 2 /Vs has been observed, and suitability as a semiconductor for thin-film transistors (TFTs) demonstrated with on/off ratios of more than 8 decades. Both In and In-Ga additives are shown to provide superior environmental stability, as well as significant change from depletion to enhancement operation modes in TFTs.

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Sources of Electrical Conductivity inSnO2

Cited by 377 publications

References 32 publications

Conductivity in transparent oxide semiconductors

Conductivity in transparent oxide semiconductors

An alternative fluorine precursor for the synthesis of SnO2:F by spray pyrolysis

Influence of In and Ga additives onto SnO2 inkjet-printed semiconductor

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