Properties of secondary particles for the reactive ion beam sputtering of Ti and TiO2 using oxygen ions

Amelal, Thomas; Pietzonka, Lukas; Rohkamm, Erik; Bundesmann, Carsten

doi:10.1116/1.5142911

Cited by 7 publications

(2 citation statements)

References 32 publications

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“…IBSD is distinguished by the highest energies of forming particles. as well as a large number of parameters affecting the deposition process and the possibility of achieving a higher vacuum in the operating mode [27][28][29][30][31][32][33][34]. This allows fine varying of the electrically conductive, structural, optical, mechanical, and other properties of the films during deposition, and to deposit more uniform layers in thickness and composition over large areas of the substrates.…”

Section: Introductionmentioning

confidence: 99%

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Gas Sensitivity of IBSD Deposited TiO2 Thin Films

et al. 2022

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TiO2 films of 130 nm and 463 nm in thickness were deposited by ion beam sputter deposition (IBSD), followed by annealing at temperatures of 800 °C and 1000 °C. The effect of H2, CO, CO2, NO2, NO, CH4 and O2 on the electrically conductive properties of annealed TiO2 thin films in the operating temperature range of 200–750 °C were studied. The prospects of IBSD deposited TiO2 thin films in the development of high operating temperature and high stability O2 sensors were investigated. TiO2 films with a thickness of 130 nm and annealed at 800 °C demonstrated the highest response to O2, of 7.5 arb.un. when exposed to 40 vol. %. An increase in the annealing temperature of up to 1000 °C at the same film thickness made it possible to reduce the response and recovery by 2 times, due to changes in the microstructure of the film surface. The films demonstrated high sensitivity to H2 and nitrogen oxides at an operating temperature of 600 °C. The possibility of controlling the responses to different gases by varying the conditions of their annealing and thicknesses was shown. A feasible mechanism for the sensory effect in the IBSD TiO2 thin films was proposed and discussed.

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Section: Introductionmentioning

confidence: 99%

“…Meanwhile, there are no publications devoted to the gas sensitive properties of IBSD TiO 2 thin films. Refs [29][30][31][32] investigated of the impact of IBSD parameters on the optical, structural, and mechanical properties of TiO 2 thin films. Argon, oxygen, and xenon ions were used to sputter the Ti and TiO 2 targets.…”

Section: Introductionmentioning

confidence: 99%

Gas Sensitivity of IBSD Deposited TiO2 Thin Films

et al. 2022

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Investigation of target erosion profiles sputter-eroded by a low-energy broad ion beam

2021

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The demand for ion beam sputtering (IBS) coated substrates is growing. In order to find new fields of application for IBS coating technology, it is necessary to understand in detail the distributions of the involved particles in an industrial-scale reactive coating process. In pursuit of this goal, in the present investigation, profiles sputter-eroded from tantalum, silicon, and silicon dioxide targets by a low-energy broad ion beam (ion energy ≤ 1.9 keV, ion source RIM-20) are measured with a mechanical profilometer and compared. To approximate the discrete and two-dimensional erosion data accurately, an empirical function is developed. For an applied target tilt angle of 55°, the results indicate that the actual angle-dependent ion–solid interaction mechanisms at the atomic level have a rather subordinate role in the macroscopic surface modification of the target in terms of the qualitative distribution of the erosion profile. The applied process geometry seems to have a much larger impact. Furthermore, in the case of silicon, a linear erosion rate as a function of erosion time is observed. Thus, the form of the broad erosion profile does not seem to have a measurable effect on the erosion rate.

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Properties of secondary particles for ion beam sputtering of silicon using low-energy oxygen ions

Kalanov

Anders

et al. 2020

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The properties of secondary particles for sputtering silicon with primary low-energy oxygen ions were investigated with dependence on the primary ion energy Eion and geometric parameters (ion incidence angle, polar emission angle, and scattering angle). The mass and energy distributions of the secondary particles were measured by energy-selective mass spectrometry. The experimental results were compared with simulations using the Monte Carlo code sdtrimsp and with calculations based on a simple elastic binary collision model. The main secondary ion species were found to be O+, O2+, Si+, and SiO+. Their energy distribution functions depend on the primary ion energy Eion and the scattering angle γ. For O+, Si+, and SiO+ ions, a decreasing scattering angle γ or an increasing primary ion energy Eion leads to a pronounced feature in the high-energy part of the distributions. The energy distributions of the secondary O2+ ions show hardly any changes with regard to the primary ion energy or the scattering angle γ. In the case of the O+ ions, the energy distribution appears to reflect several direct scattering channels, which could be associated with the primary ion energy Eion, and half of the ion energy Eion/2. The present experimental results are compared with previous investigations for the sputtering of Si with the noble gas ions, such as Ne+, Ar+, and Xe+.

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Properties of secondary particles for the reactive ion beam sputtering of Ti and TiO2 using oxygen ions

Cited by 7 publications

References 32 publications

Gas Sensitivity of IBSD Deposited TiO2 Thin Films

Gas Sensitivity of IBSD Deposited TiO2 Thin Films

Investigation of target erosion profiles sputter-eroded by a low-energy broad ion beam

Properties of secondary particles for ion beam sputtering of silicon using low-energy oxygen ions

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