The scaling of the single-pulse laser threshold fluence for dielectric breakdown with respect to pulse duration and material band gap energy was investigated in the subpicosecond pulse regime using oxide films ͑TiO 2 , Ta 2 O 5 , HfO 2 , Al 2 O 3 , and SiO 2 ͒. A phenomenological model attributes the pulse duration dependence to the interplay of multiphoton ionization, impact ionization, and subpicosecond electron decay out of the conduction band. The observed linear scaling of the breakdown fluence with band gap energy can be explained within the framework of this model by invoking the band gap dependence of the multiphoton absorption coefficient from Keldysh photoionization theory. The power exponent of the observed dependence of the breakdown threshold fluence F th on pulse duration p , F th ϰ p , is independent of the material and is attributed to photoionization seeded avalanche ionization.

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We report on the laser damage resistance of ion beam-sputtered oxide materials (Al2O3, Nb2O5, HfO2, SiO2, Ta2O5, ZrO2) and mixtures of Al2O3-SiO2, Nb2O5-SiO2, HfO2-SiO2, Ta2O5-SiO2, and ZrO2-SiO2, irradiated by single 500 fs pulses at 1030 nm. Laser-induced damage threshold (LIDT), refractive index, and bandgaps of the single-layer coatings are measured. For pure oxide materials a linear evolution of the LIDT with bandgap is observed. The results are in accordance with our simulations based on photo-ionization and avalanche-ionization. In the case of mixtures, however, deviations from the previous behaviors are evidenced. The evolution of the LIDT as a function of the refractive index is analyzed, and an empirical description of the relation between refractive index and LIDT is proposed.

Laser damage phenomena are governed by a number of different effects for the respective operation modes and pulse durations. In the ultra short pulse regime the electronic structure in the dielectric coating and the substrate material set the prerequisite for the achieved laser damage threshold of an optical component. Theoretical considerations have been done to assess the impact of contributing ionization phenomena in order to find a valid description for laser-induced damage in the femtosecond (fs) domain. Subsequently, a special set of sample has been designed to verify these considerations via ISO certified laser damage testing. Examining the theoretical and experimental data reveals the importance of multi-photon absorption for the optical breakdown. For titania, the influence of multi-photon absorption has been clearly shown by a quantized wavelength characteristic of the laser damage threshold.

The physical effects reducing the damage threshold of dielectric films when exposed to multiple femtosecond pulses are investigated. The measured temperature increase of a Ta 2 O 5 film scales exponentially with the pulse fluence. A polarized luminescence signal is observed that depends quadratically on the pulse fluence and is attributed to twophoton excitation of self-trapped excitons that form after band-to-band excitation. The damage fluence decreases with increasing pulse number, but is independent of the repetition rate from 1 Hz to 1 kHz at a constant pulse number. The repetition rate dependence of the breakdown threshold is also measured for TiO 2 , HfO 2 , Al 2 O 3 , and SiO 2 films. A theoretical model is presented that explains these findings.