We report on the laser damage resistance of ion beam-sputtered oxide materials (Al2O3, Nb2O5, HfO2, SiO2, Ta2O5, ZrO2) and mixtures of Al2O3-SiO2, Nb2O5-SiO2, HfO2-SiO2, Ta2O5-SiO2, and ZrO2-SiO2, irradiated by single 500 fs pulses at 1030 nm. Laser-induced damage threshold (LIDT), refractive index, and bandgaps of the single-layer coatings are measured. For pure oxide materials a linear evolution of the LIDT with bandgap is observed. The results are in accordance with our simulations based on photo-ionization and avalanche-ionization. In the case of mixtures, however, deviations from the previous behaviors are evidenced. The evolution of the LIDT as a function of the refractive index is analyzed, and an empirical description of the relation between refractive index and LIDT is proposed.

Laser damage phenomena are governed by a number of different effects for the respective operation modes and pulse durations. In the ultra short pulse regime the electronic structure in the dielectric coating and the substrate material set the prerequisite for the achieved laser damage threshold of an optical component. Theoretical considerations have been done to assess the impact of contributing ionization phenomena in order to find a valid description for laser-induced damage in the femtosecond (fs) domain. Subsequently, a special set of sample has been designed to verify these considerations via ISO certified laser damage testing. Examining the theoretical and experimental data reveals the importance of multi-photon absorption for the optical breakdown. For titania, the influence of multi-photon absorption has been clearly shown by a quantized wavelength characteristic of the laser damage threshold.

Abstract:We have investigated the suitability of atomic layer deposition (ALD) for SiO 2 optical coatings and applied it to broadband antireflective multilayers in combination with HfO 2 as the high refractive index material. SiO 2 thin films were successfully grown using tris [dimethylamino]silane (3DMAS), bis [diethylamino]silane (BDEAS) with plasma activated oxygen as precursors, and the AP-LTO 330 precursor with ozone, respectively. The amorphous SiO 2 films show very low optical losses within a spectral range of 200 nm to 1100 nm. Laser calorimetric measurements show absorption losses of 300 nm thick SiO 2 films of about 1.5 parts per million at a wavelength of 1064 nm. The films are optically homogeneous and possess a good scalability of film thickness. The film surface porosity -which correlates to a shift in the transmittance spectra under vacuum and air conditions -has been suppressed by optimized plasma parameters or Al 2 O 3 sealing layers. and TiO 2 multilayers for applications as bandpass filters and antireflection coatings," Appl. Opt. 48(9), 1727-1732 (2009). 7. N. T. Gabriel, S. S. Kim, and J. J. Talghader, "Control of thermal deformation in dielectric mirrors using mechanical design and atomic layer deposition," Opt. Lett. 34(13), 1958-1960 (2009 4675-4685 (2012). 25. K. J. Hughes and J. R. Engstrom, "Nucleation delay in atomic layer deposition on a thin organic layer and the role of reaction thermochemistry," J.

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