Properties of silicon crystals

Paloheimo, J.

doi:10.1016/b978-0-12-817786-0.00003-7

Cited by 4 publications

(2 citation statements)

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“…The formation of these defects is due to the reorganization of additional selfinterstitials into the lattice during oxidation. [33,34] Undesirable fast-diffusing (metallic) impurities such as Au, Cu, Fe, and Ni present in the Si substrates contribute to the formation of OISFs. In particular, Murphy et al showed a strong correlation between the Fe amount segregated to oxide precipitates and associated stacking faults.…”

Section: Resultsmentioning

confidence: 99%

“…As expected, the elimination of precipitates and associated defects leads to a more significant decrease in the resistivity of the test samples compared to the reference samples, since the defects reduce the conductivity of the semiconductors. [34] The resistivity of the samples decreases whenever the oxidation temperature increases since the incorporation rate of fastdiffusing impurities into b-Si is enhanced by increased thermal activation at higher gettering temperatures. In particular, the resistivity of test samples abruptly decreases at 950 °C from 3.0 to 0.7 Ω cm.…”

Section: Resultsmentioning

confidence: 99%

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External Gettering of Metallic Impurities by Black Silicon Layer

Ayvazyan

Hakhoyan

Ayvazyan

et al. 2023

Physica Status Solidi (a)

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Black silicon (b‐Si) has many attractive properties and is currently being adopted in various fields of semiconductor technology. It is shown here that b‐Si during thermal activation may serve as an external gettering layer to remove metallic impurities and associated defects from bulk Si. The gettering efficiency by b‐Si is estimated according to the results of studying the resistivity, defect density, interstitial iron concentration, and effective minority carrier lifetime on gettered test and ungettered reference Si samples. It is shown that in the thermal oxidation process, the b‐Si layer serves as an effective drain for excess iron atoms and other fast‐diffusing impurities, thereby significantly reducing the density of oxidation‐induced stacking faults in Si. In addition, the resistivity of the substrates decreases, and the bulk carrier lifetime increases significantly. Finally, gettering by b‐Si is introduced into the solar cells fabrication process and its effect on solar cell current–voltage characteristics is investigated. It has been shown that all electronic parameters of the solar cells are improved. The conversion efficiency of ungettered solar cells is 16.8%, and for gettered solar cells, depending on the oxidation temperature, it increases by 1.36–1.96%.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%