Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2

Santucci, S.; Lozzi, L.; Passacantando, M.; Phani, A.R.; Palumbo, E.; Bracchitta, G.; Tommasis, R. De; Torsi, A.; Alfonsetti, R.; Moccia, G.

doi:10.1016/s0022-3093(98)00886-2

Cited by 8 publications

(4 citation statements)

References 12 publications

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“…A Poisson's ratio of (0.26 ( 0.01) has been reported for silicon dioxide. 91 The density of deposited silicon nitride has been reported as 2660 kg‚m -3 by Santucci et al 92 and 2865 kg‚m -3 in ref 38 while Santucci et al 92 gave values of 2210 kg‚m -3 for thermally deposited silicon oxide and about 2400 kg‚m -3 for CVD silicon oxide. Young's modulus of deposited aluminum can be up to 20 GPa 93 lower than that of the bulk material for which E ≈ 70 GPa while aluminum nitride has E ≈ 300 GPa.…”

Section: Theorymentioning

confidence: 97%

A Vibrating Edge Supported Plate, Fabricated by the Methods of Micro Electro Mechanical System for the Simultaneous Measurement of Density and Viscosity: Results for Methylbenzene and Octane at Temperatures between (323 and 423) K and Pressures in the Range (0.1 to 68) MPa

Goodwin¹,

Donzier²,

Vancauwenberghe³

et al. 2005

J. Chem. Eng. Data

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In the petroleum industry, measurements of the density and viscosity of petroleum reservoir fluids are required to determine the value of the produced fluid and production strategy. These thermophysical properties are also useful for the design of separators and process equipment and to control production processes. To measure the density and viscosity of petroleum fluids requires a transducer that can operate up to reservoir conditions and, to guide value and exploitation calculations with sufficient rigor, provide results with an accuracy of about ± 1 % in density and ± 10 % in viscosity. Necessarily, these specifications place robustness as a superior priority to accuracy for the design. In this paper, we describe a Micro Electrical Mechanical System (MEMS) that is capable of providing both density and viscosity of fluids in which it is immersed at the desired operating conditions. This transducer is based on a vibrating plate, with dimensions of about 1 mm and mass of about 0.12 mg, clamped along one edge. The measured resonance frequency of the first bending mode in a vacuum at a temperature of 298 K is about 12 kHz with a quality factor about 2600. Measurements of the resonance frequency and quality factor of the first-order bending mode were combined with semiempirical working equations and the mechanical properties of the plate to determine the density and viscosity when immersed in methylbenzene at temperatures of (323 and 373) K and octane at temperatures between (323 and 423) K both at pressures below 68 MPa where the density varies between (619 and 890) kg·m-3 and the viscosity varies from (0.205 to 0.711) mPa·s. The measurements in methylbenzene at pressures between (0.1 and 68) MPa and a temperature of 323 K were used to determine the adjustable parameters in the semiempirical working equations. The expanded (k = 2) (twice the standard deviation) uncertainty, including the calibration, in density is about ± 0.2 % and in viscosity is about ± 2.5 %; at a temperature of 423 K, the expanded uncertainty in viscosity is about 6 %. The results obtained at temperatures below 423 K differed by less than ± 0.3 % for density and less than ± 5 % for viscosity from either accepted correlations of literature values or results documented by others with experimental techniques that utilize different principles and have quite different sources of systematic error. These differences are within a reasonable multiple of the relative combined expanded uncertainty of our measurements. For octane at a temperature of 423 K, the measured viscosity differed by less than 13 % from literature values while the density differed by less than ± 0.5 %.

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Section: Theorymentioning

confidence: 97%

A Vibrating Edge Supported Plate, Fabricated by the Methods of Micro Electro Mechanical System for the Simultaneous Measurement of Density and Viscosity: Results for Methylbenzene and Octane at Temperatures between (323 and 423) K and Pressures in the Range (0.1 to 68) MPa

Goodwin¹,

Donzier²,

Vancauwenberghe³

et al. 2005

J. Chem. Eng. Data

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“…Few systematic studies that analyze the effect of processing conditions on these parameters in stacked ONO structures have been reported. [3][4][5][6] Some of these studies observed ONO stacks to consist of well-defined layers of SiO 2 and Si 3 N 4 3,4 with no significant nitrogen content in the oxide layers. Other studies 5,6 revealed considerable concentration of nitrogen in the top oxide layer of the ONO stacks, as well as the segregation of nitrogen to the bottom SiO 2 /Si interface.…”

mentioning

confidence: 99%

Structure, Chemistry, and Electrical Performance of Silicon Oxide-Nitride-Oxide Stacks on Silicon

Levin

Kovler

Roizin

et al. 2004

J. Electrochem. Soc.

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The structure and chemistry of silicon oxide-nitride-oxide ͑ONO͒ stacks on silicon with differently processed top oxide layers were analyzed using high-resolution transmission electron microscopy, electron energy loss spectroscopy, secondary ion mass spectroscopy, and X-ray specular reflectometry. The changes observed in the structure and chemistry of the ONO stacks were correlated with the electrical performance of these stacks in flash-memory devices. The results demonstrated that using larger thermal budgets to form the top oxide layer yields ͑i͒ broader N distribution across the nitride/oxide interfaces, (ii) reduced H content at the Si/SiO 2 interfaces, (iii) increased density of the top oxide layer, and ultimately, (iv) improved electrical performance of ONO-based memory devices.Silicon oxide-nitride-oxide amorphous multilayers ͑ONO stacks͒ attract considerable interest as the charge-storage media in nonvolatile memory devices. 1,2 Ultrathin ONO stacks are commonly prepared by thermal growth of a SiO 2 layer ͑bottom oxide͒ on silicon, followed by low-pressure chemical vapor deposition ͑LPCVD͒ of Si 3 N 4 . Subsequently, the top oxide is either grown by the nitride reoxidation or deposited by LPCVD. The typical thickness of individual layers in the ONO stacks ranges from 5 to 15 nm. The critical structural and compositional parameters that affect electrical performance of the ONO-based devices include the physical density of the amorphous oxide/nitride layers and the depth distributions of the oxygen, nitrogen, and hydrogen atoms. Few systematic studies that analyze the effect of processing conditions on these parameters in stacked ONO structures have been reported. 3-6 Some of these studies observed ONO stacks to consist of well-defined layers of SiO 2 and Si 3 N 4 3,4 with no significant nitrogen content in the oxide layers. Other studies 5,6 revealed considerable concentration of nitrogen in the top oxide layer of the ONO stacks, as well as the segregation of nitrogen to the bottom SiO 2 /Si interface. Reports of artifacts associated with nitrogen segregation to the SiO 2 /Si interface during spectroscopic measurements 7,8 added to the confusion in the interpretation of the existing data. The optimal ͑from the electrical performance point of view͒ nitrogen profile in the bottom oxide of ONO stacks remains a subject of debate. 9,10 At present, incomplete understanding of the processing-structure/chemistry-properties relations impedes rational optimization of the processing parameters for the ONO stacks. The present work is aimed at a systematic study of these relations in the ONO stacks for flash-memory applications. We applied both spatially resolved electron energy loss spectroscopy ͑EELS͒ in a transmission electron microscope ͑TEM͒ and secondary ion mass spectroscopy ͑SIMS͒ to analyze elemental distributions in the differently processed ONO stacks, while the densities of individual layers in these stacks were determined using X-ray specular reflectometry ͑XRR͒. The results of structural/compositional an...

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“…The breakdown field, which is the destruction point of a dielectric layer or film, can also be affected by factors like film thickness. 11 The total thickness of the ONO film was greater. It can thus be presumed that the better breakdown field of the ONO film is due to its greater film thickness compared with the SiO 2 film.…”

Section: Resultsmentioning

confidence: 98%

Characteristics of SiO2/Si3N4/SiO2 Stacked-Gate Dielectrics Obtained via Atomic-Layer Deposition

Lee¹,

Lee²,

Ju³

et al. 2011

J. Nanosci. Nanotech.

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An interpoly-stacked dielectric film with a SiO2/Si3N4/SiO2/Si (ONO) structure was prepared via the atomic-layer deposition method. The multilayer structure of the ONO film with triple interfaces was investigated via medium-energy ion scattering (MEIS). A few defects in the interface layer of the ONO structure were detected. From the X-ray photoelectron spectroscopy (XPS) results, it was presumed that the interface layer with defects in the MEIS result is due to the formation of an oxynitride layer on the unstable and rougher Si3N4 layer via. By measuring the I-V characteristics, the leakage current density and breakdown field of the ONO film were determined to be 3.4 x 10(-9) A/cm2 and 10.86 MV/cm, respectively. By estimation the C-V curve, the flat band (V(FB)) of the ONO film shifted to a negative voltage (-1.14 V), the dielectric constant (K(ONO)) of the ONO film was 5.79, and the effective interface-trapped charge density of the ONO film was about 4.96 x 10(11)/cm2.

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Properties of stacked dielectric films composed of SiO2/Si3N4/SiO2

Cited by 8 publications

References 12 publications

A Vibrating Edge Supported Plate, Fabricated by the Methods of Micro Electro Mechanical System for the Simultaneous Measurement of Density and Viscosity: Results for Methylbenzene and Octane at Temperatures between (323 and 423) K and Pressures in the Range (0.1 to 68) MPa

A Vibrating Edge Supported Plate, Fabricated by the Methods of Micro Electro Mechanical System for the Simultaneous Measurement of Density and Viscosity: Results for Methylbenzene and Octane at Temperatures between (323 and 423) K and Pressures in the Range (0.1 to 68) MPa

Structure, Chemistry, and Electrical Performance of Silicon Oxide-Nitride-Oxide Stacks on Silicon

Characteristics of SiO<SUB>2</SUB>/Si<SUB>3</SUB>N<SUB>4</SUB>/SiO<SUB>2</SUB> Stacked-Gate Dielectrics Obtained via Atomic-Layer Deposition

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