Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

Wong, Yew Hoong; Cheong, Kuan Yew

doi:10.1016/j.matchemphys.2012.07.035

Cited by 10 publications

(3 citation statements)

References 59 publications

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“…Stoichiometric metal oxide film can be formed. 8,9,12 However, use of this method for formation of samarium oxide thin films has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Goh

Haseeb

Wong

2016

Journal of Elec Materi

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Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has been carried out in oxygen ambient at various temperatures (600°C to 900°C) for 15 min and the effect of the oxidation temperature on the structural, chemical, and electrical properties of the resulting Sm 2 O 3 layers investigated. The crystallinity of the Sm 2 O 3 films and the existence of an interfacial layer were evaluated by x-ray diffraction (XRD) analysis, Fouriertransform infrared (FTIR) spectroscopy, and Raman analysis. The crystallite size and microstrain of Sm 2 O 3 were estimated by Williamson-Hall (W-H) plot analysis, with comparison of the former with the crystallite size of Sm 2 O 3 as calculated using the Scherrer equation. High-resolution transmission electron microscopy (HRTEM) with energy-dispersive x-ray (EDX) spectroscopy analysis was carried out to investigate the cross-sectional morphology and chemical distribution of selected regions. The activation energy or growth rate of each stacked layer was calculated from Arrhenius plots. The surface roughness and topography of the Sm 2 O 3 layers were examined by atomic force microscopy (AFM) analysis. A physical model based on semipolycrystalline nature of the interfacial layer is suggested and explained. Results supporting such a model were obtained by FTIR, XRD, Raman, EDX, and HRTEM analyses. Electrical characterization revealed that oxidation temperature at 700°C yielded the highest breakdown voltage, lowest leakage current density, and highest barrier height value.

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“…Stoichiometric metal oxide film can be formed. 8,9,12 However, use of this method for formation of samarium oxide thin films has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Goh

Haseeb

Wong

2016

Journal of Elec Materi

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“…In materials science, the oxides, nitrides and oxynitrides of transition metals are of great interest due to their electrical and optical properties as well as their inert chemical behavior [1][2][3][4][5][6][7][8][9][10][11][12][13]. Zirconium oxynitride (ZrO x N y ) thin film has been extensively applied in the fields of wear and corrosion resistant coating [6,7], decoration [9] and microelectronic devices [1] (gate dielectric in silicon-based [8] and silicon carbidebased [10,14] metal-oxide semiconductor devices, and biomedical devices etc. [12]).…”

Section: Introductionmentioning

confidence: 99%

The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film

Lin

Zhan

et al. 2019

Semicond. Sci. Technol.

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Semiconductive zirconium oxynitride (ZrO x N y ) thin film was deposited on a sapphire substrate by reactive magnetron sputtering, and micro temperature sensors based on the film were fabricated by a microelectromechanical system (MEMS) micromachining process. The detailed structure of the ZrO x N y thin film was examined using x-ray diffractometer (XRD), scanning electron microscopy (SEM), field emission transmission electron microscope (FE-TEM), and the depth profiles of different elements and zirconium compounds in nanoscale were further researched by depth x-ray photoelectron spectroscopy (XPS). The conduction process of the whole film, the grain and the grain boundary of ZrO x N y thin film were investigated with temperature dependent AC impedance spectroscopy. It is found that the conductivity of the ZrO x N y film is dominated by thermal activation and Mott variable range hopping (VRH) in the temperature range of 300 K-75 K and 75 K-10 K, respectively. The conduction process of the grain and grain boundary follow thermal activation model in relatively high temperature range. With the reduction of temperature the conduction process of the grain boundary obeys Mott VRH, while concerning the conduction process for the grain, the nearest-neighbor hopping (NNH) should also be taken into account in addition to Mott VRH.

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“…Wilk et al [1] has reviewed on the possibility of the use of various binary oxides to be used as gate oxide. Other works reported on the use of TiO 2 [2,3], Al 2 O 3 [4], ZrO 2 [2,[4][5][6][7], ZrON [8][9][10][11][12][13][14][15], HfO 2 [4,16], TaO 2 [1,3,4], and Gd 2 O 3 [17], as high-κ gate oxide to replace SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

Wong

Lee

Goh

2017

Micro & Nano Letters

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Formation of anodic samarium oxide thin film by anodisation of 15 nm thin sputtered samarium metal on silicon substrate was systematically investigated. Sputtered Sm on Si substrate was followed by anodisation in 0.01 M NaOH (pH 11) at various applied voltages (10, 15, 20, and 25 V). All anodisation processes were performed for 10 min at room temperature in the bath with constant stirring. The crystallinity of Sm 2 O 3 film was evaluated by X-ray diffraction analysis. The crystallite size of Sm 2 O 3 was calculated by Scherrer equation. The cross-section of 20 V sample was examined by high-resolution transmission electron microscope. The sample anodised at 20 V demonstrated the highest electrical breakdown field of 9.50 MV/cm at 10 −4 A/cm 2. This is attributed to the lowest effective oxide charge, slow trap charge density, average interface trap density, and total interface trap density.

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Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

Cited by 10 publications

References 59 publications

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film

Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution

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Properties of thermally oxidized and nitrided Zr-oxynitride thin film on 4H–SiC in diluted N2O ambient

Cited by 10 publications

References 59 publications

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate

The conduction process of grain and grain boundary in the semiconductive zirconium oxynitride thin film

Influence of applied voltage on the physical and electrical properties of anodic Sm 2 O 3 thin films on Si in 0.01 M NaOH solution

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Influence of applied voltage on the physical and electrical properties of anodic Sm ₂ O ₃ thin films on Si in 0.01 M NaOH solution