Properties of truly bulk GaN monocrystals grown by ammonothermal method

Abstract

We are presenting some physical and chemical basis of ammonothermal method of bulk gallium nitride synthesis in ammonobasic route. Excellent structural and wide spectrum of electrical parameters of truly bulk GaN crystals obtained in this way are revealed. In considered crystals a low dislocation density (5 × 103 cm–2) is attainable. At the same time the crystal lattice is extremely flat and the (0002) rocking curve is very narrow (FWHM=16 arcsec). Both polar and nonpolar ammonothermal GaN substrates enabled to grow high optical quality, strain‐free homoepitaxial layers. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation

“…C ij kl = a it a ju a kv a lw C tuvw (11) where for the rotation of the Cartesian system around the 0x axis by the angle ϑ :…”

“…Recently, however, relatively thick c-oriented GaN substrates have been reported (e.g., [11]). Then proper slicing may be used to produce nonpolar or semipolar native GaN substrates [2,5].…”

Recent achievements in AMMONO-bulk method

“…The ammonothermal method enabled growth of c-plane oriented (polar) 1-and 1.5-in substrates [8] that are currently on the market. Fig.…”

“…However, there are still many problems waiting to be solved, such as poor growth of seeds, heterogeneity, mosaicity, poor scalability or extreme growth conditions. Therefore, we proposed the ammonothermal method in order to overcome these difficulties [5][6][7][8]. In this paper we describe our recent developments in manufacturing AMMONO-bulk GaN substrates.…”

Molecular dynamics simulation of diffusion behavior of N atoms on the growth surface in GaN solution growth

“…Bulk GaN single crystals have been grown by several methods, such as hydride vapor phase epitaxy (HVPE) [4,5], ammonothermal growth [6,7], high-pressure solution growth (HPSG) [8,9] and Na-flux solution growth [10,11]. The HVPE method results in a faster growth rate (above 100 mm=h) than others, but its high production cost and by-product GaCl 4 are issues to be resolved.…”