Properties of Va metal-B films prepared by r.f.-sputtering

Oda, Kazuhiro; Yata, Hirohide; Yoshio, Tetsuo; Oôka, Kazuo; Oda, Kōhei

doi:10.1007/bf01145535

Cited by 6 publications

(9 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…5e͒, only a broad peak appears in the XRD pattern of the film. This result is similar to that reported by Oda et al, 15 who proposed that this peak corresponds to the ͑110͒ orientation of body-centered cubic ͑bcc͒ Ta metal. However, when the bias exceeds Ϫ100 V, XRD patterns of the films ͑Fig.…”

Section: Methodssupporting

confidence: 92%

Growth of Tantalum Boride Films by RF Magnetron Sputtering

Lin

Lee

2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

This paper describes a research project in which tantalum boride (TaB x ) films were deposited on silicon substrates by radio frequency ͑rf͒ magnetron sputtering of a TaB 2 alloy target. The deposition rate, chemical composition, crystalline microstructure, and sheet resistivity were examined by transmission electron microscopy, X-ray photoelectron spectroscopy, X-ray diffraction, scanning electron microscopy, and sheet resistance measurements. The results indicate that the deposition rate, film composition, and microstructure correlate closely with the bias. The deposition mechanism and kinetic model which control the film characteristics are presented here as well.Due to their high thermodynamic stability, hardness, excellent electrical conductivity, and high melting points, refractory metal borides are widely recognized as an attractive class of materials for a wide range of mechanical applications in abrasive, erosive, corrosive, and high-temperature environments. Most studies to date have focused on the borides of Ti, Zr, Hf, Cr, and W.

show abstract

Section: Methodssupporting

confidence: 92%

Growth of Tantalum Boride Films by RF Magnetron Sputtering

Lin

Lee

2003

J. Electrochem. Soc.

View full text Add to dashboard Cite

show abstract

“…It is found that the ratio of the film increases a little concavely with increasing the target ratio. Sinailar preferred orientation has been observed also on the Ta-B film [2]. From the results of electron probe X-ray microanalyser (EPMA) analysis for Nb-B films, it was confirmed that the Nb-B film composition was fairly uniform over the film.…”

Section: Characterization Of the Filmmentioning

confidence: 76%

“…A composite target used for co-sputtering was composed of a boron pow-der disc (99%, 100mm ~) and geometrically arranged 69 niobium metal chips (99.96%, 4 to 8 mm square) [2]. The cosputtering technique was employed in order to control the composition of the Nb-B film.…”

Section: Methodsmentioning

confidence: 99%

“…1. TaB2 [2], Co [3], ZnO [4], A1N [5], Ba-hexaferrite [6] and e-Fe203 [7]. Nb-B films can be prepared in the compositional range from 30 to 76 at % B.…”

Section: Characterization Of the Filmmentioning

confidence: 99%

“…The authors have applied the r.f.-sputtering method to the preparation of borides films in the Ta-B system, and obtained Ta-B films with high hardness and high electrical conductivity [2]. Succeeding to the Ta-B system, the r.f.-sputtering technique has also been applied to the preparation of the coating films in the Nb-B system.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations