Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Kuzmı́k, J.; Ostermaier, Clemens; Pozzovivo, G.; Basnar, B.; Schrenk, W.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Grandjean, N.; Douvry, Y.; Gaquière, C.; Jaeger, J.C. de; Ćičo, K.; Fröhlich, K.; Škriniarová, J.; Kováč, J.; Strasser, G.; Pogány, D.; Gornik, E.

doi:10.1109/ted.2010.2055292

Cited by 34 publications

(22 citation statements)

References 30 publications

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“…However, similarly to AlGaN/GaN, they may also suffer from parasitic effects related to surface traps. A mechanism to mitigate these effects is to use a thin n ++ -GaN cap layer, since free carriers compensate the charge variation at the GaN trapping surface, as experimentally demonstrated in [8]. In this work we complement the experimental results with data obtained from two-dimensional numerical device simulation and we study the extension of the gate depletion region at different drain biases.…”

Section: Introductionmentioning

confidence: 86%

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A Promising New n⁺⁺-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Palankovski

Kuzmı́k

2013

ECS Trans.

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We study enhancement-mode n++-GaN/InAlN/GaN high electron mobility transistors (EHEMTs) by means of two-dimensional numerical device simulation. An introduction of a highly-doped GaN cap layer, which is recessed under the gate, was initially proposed for an improvement of the device performance by diminishing surface traps-related parasitic effects. Our new simulation results reveal that, unlikely to planar transistor structures, the extension of the gate depletion region with drain bias is kept restricted in the presence of a n++-GaN cap layer. This highly-scaled new device concept is very promising for ultra-high frequency performance.

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Section: Introductionmentioning

confidence: 86%

“…The simulated devices are adopted from [8]. The structures consist of a 2μm GaN layer, 1nm AlN, 1nm In 0.17 Al 0.83 N, and 6nm GaN:Si cap, doped to 2x10 20 cm -3 (see Fig.1).…”

Section: Device Description and Simulation Setupmentioning

confidence: 99%

A Promising New n⁺⁺-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Palankovski

Kuzmı́k

2013

ECS Trans.

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“…Additionally, we have used traps corresponding to iron with a concentration of 4×10 18 cm -3 at ET=EV+0.6 eV in the Al0.1Ga0.9N back barrier [9]. The GaN cap donor concentration was set to be 5×10 20 cm -3 , which is similar to that reported in [10] with energy level of ET=EC-0.5 eV [9]. Fig.…”

Section: Ease Of Use Algan/gan Tlm Heterostructures III Simulatimentioning

confidence: 99%

“…The inverse piezoelectric effect induced decrease in total polarization is caused by the additional stress imposed by the applied electric field on the drain contact. The decrease in total polarization in the heterostructure reduces a 2DEG in the channel, which would reduce the drain current of a transistor in on-conditions [10][11].…”

Section: Ease Of Use Algan/gan Tlm Heterostructures III Simulatimentioning

confidence: 99%

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

Ahmeda

Ubochi

Kálna

et al. 2017

2017 12th European Microwave Integrated Circuits Conference (EuMIC)

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Abstract-The interplay of self-heating and polarization affecting the current is studied in Al0.32Ga0.68N/AlN/GaN/Al0.1Ga0.9N Transmission Line Model (TLM) heterostructures with a scaled source-drain distance. The study is based on meticulously calibrated TCAD simulations against I-V experimental characteristics using an electro-thermal model. The electro-thermal simulations show hot-spots at the edge of the drain contact due to a large electric field affecting the device reliability. Due to the applied electrical stress, the total polarization, relative to the 18 μm heterostructure, decreases by 7 %, 10 % and 17% during a reduction of the source-to-drain distance to the 12 μm, 8 μm, and 4 μm, respectively, as a result of the additional strain induced by electrical stress. This additional stress on source/drain contacts reduces the polarization at the surface as a result of the inverse piezoelectric effect.

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“…On the other hand, capping of the In-polarity InAlN/GaN/InN/InAlN HEMT with InN may offer an option of the gate recessing, similarly as described for capped n þþ GaN/InAlN/AlN/ GaN HEMTs. 21) However, at this stage, it is hard to prefer any polarity of the possible InN-channel HEMTs as corresponding technologies are still to be developed. …”

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N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors

Kuzmı́k

2012

Appl. Phys. Express

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Using a coupled Schrö dinger-Poisson equation solver, we propose an N-polarity InN-channel quantum well high-electron-mobility transistors. The structure comprises from the bottom, a relaxed InAlN buffer with Al mole fraction between 0.1 and 0.3, GaN spacer with thickness less than 1 nm, 5 nm strained InN, and 5 nm ZrO 2 or HfO 2 to insulate a gate. Depending on the Al mole fraction, calculations indicate highly confined electrons in the channel with a two-dimensional density ranging from 1:6 Â 10 13 to 3:5 Â 10 13 cm À2 . The polarity of the structure provides a possibility to grow InN as the last III-N layer with a relatively low polarization charge at the surface. #

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Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Cited by 34 publications

References 30 publications

A Promising New n⁺⁺-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

A Promising New n⁺⁺-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors

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Proposal and Performance Analysis of Normally Off $ \hbox{n}^{++}$ GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Cited by 34 publications

References 30 publications

A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

A Promising New n++-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

Self-heating and polarization effects in AlGaN/AlN/GaN/AlGaN based devices

N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors

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A Promising New n⁺⁺-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications

A Promising New n⁺⁺-GaN/InAlN/GaN HEMT Concept for High-Frequency Applications