Proposal for a universal nonvolatile logic device based on the phase change magnetic material

Adam, Adam Abdalla Elbashir

doi:10.1007/s00339-020-04096-y

Cited by 5 publications

(2 citation statements)

References 22 publications

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“…Logic-in-memory (LIM), integrating an arithmetic logic cell (ALU) and a memory cell into one cell and simultaneously performing the logic operations and storing the output results in the memory is proposed to be one of the most innovative approaches to overcome the traditional von Neumann architecture bottleneck in future computing systems. − Various nonvolatile memories (NVMs) based on different switching materials have been proposed and researched for LIM application. ,− One promising solution is ferroelectric (FE) NVMs based on HfO 2 -doped polarization materials. Among HfO 2 -based materials doped with different elements, Zr-doped HfO 2 (HZO) materials have attracted extensive attention due to their excellent performance in terms of CMOS process compatibility, low thermal budget, good step coverage, high endurance characteristics, and scaling down abilities .…”

Section: Introductionmentioning

confidence: 99%

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Tian

Chen

Yan

et al. 2023

ACS Appl. Electron. Mater.

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Highly reconfigurable logic-in-memory (LIM) cells based on emerging HfO 2doped ferroelectric (FE) memory with multiple polarization states have received extensive attention in overcoming the bottleneck of a von Neumann architecture with flexible and efficient computing ability. However, the variation of polarization states in device-to-device (D2D) and cycle-to-cycle (C2C) caused by partial polarization switching seriously plagues the large-scale integration of LIM based on multistate FE memory. Here, a highly reliable reconfigurable LIM with parallel computing capability is proposed based on an indium-gallium-zinc-oxide (IGZO)modulated multistate antiferroelectric (AFE) nonvolatile memory (NVM) with complete switching of different polarization states. The nonvolatile multiple polarization states of the AFE NVM are realized by introducing the bidirectional transformation of a built-in electric field in the memory, which is modulated by the accumulation or depletion of IGZO insertion layers between the electrodes and the AFE layer. The improved variation of C2C and D2D benefited from a nonoverlapping multiple coercive electric field (E c ) distribution and step-by-step polarization switching in AFE memory. Based on the proposed multistate AFE NVM, 2 logical operations are executed in parallel and 16 Boolean logic functions are constructed, including the 14 Boolean logic functions realized by a single device in 2 steps and the other 2 Boolean logic function realized by two devices in 4 steps. In addition, a 1-bit binary full subtractor and full adder can be realized efficiently using the multistate AFE NVM in parallel by fewer devices and operation steps, indicating that the AFE NVM is promising for developing larger scale efficient LIM with high reliability.

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Section: Introductionmentioning

confidence: 99%

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Tian

Chen

Yan

et al. 2023

ACS Appl. Electron. Mater.

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show abstract

“…These superior traits astonishingly match the biological properties of the brain neurons and synapses. Most importantly, one certain physical state of the NVMs e.g., electric resistance, can be continuously modulated by means of external excitations, which can be harnessed to achieve important functionalities of arithmetic and logic computing (Feldmann et al, 2017;Sebastian et al, 2019;Adam, 2020). This undoubtedly renders NVMs a capability of working in non-von Neumann mode, thus opening a route towards the success of hardware-based ANNs.…”

Section: Introductionmentioning

confidence: 99%

Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device

Lian

Gao

et al. 2022

Front. Mater.

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Phase-change random access memory (PCRAM) is widely regarded as one of the most promising candidates to replace Flash memory as the next generation of non-volatile memories due to its high-speed and low-power consumption characteristics. Recent advent of the blade-type PCRAM with low programming current merit further confirms its prospects. The thermoelectric effects existing inside the PCRAM devices have always been an important factor that determines the phase-transformation kinetics due to a fact that it allows PCRAM to have electric polarity dependent characteristics. However, the potential physics governing the thermoelectric effects for blade-type PCRAM device still remains vague. We establish a three-dimensional (3D) electro-thermal and phase-transformation model to study the influences of thermal boundary resistance (TBR) and device scaling on the thermoelectric effects of the blade-type PCRAM during its “RESET” operation. Our research shows that the presence of TBR significantly improves the electric polarity-dependent characteristics of the blade-type PCRAM, and such polarity-dependent characteristic is found immune to the scaling of the device. It is therefore possible to optimize the thermoelectric effects of the blade-type PCRAM through appropriately tailoring the TBR parameters, thus further lowering resulting power consumption.

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Impact of Temperature on GST/ITO/Soda-Lime Glass Substrate Thin Film Devices

Singh

Shkir

Jen

2022

J. Electron. Mater.

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Proposal for a universal nonvolatile logic device based on the phase change magnetic material

Cited by 5 publications

References 22 publications

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Highly Reliable Logic-in-Memory by Bidirectional Built-in Electric-Field-Modulated Multistate IGZO/AFE Nonvolatile Memory

Impact of Thermal Boundary Resistance on Thermoelectric Effects of the Blade-Type Phase-Change Random Access Memory Device

Impact of Temperature on GST/ITO/Soda-Lime Glass Substrate Thin Film Devices

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