“…For instance, Gaggero-Sager et al studied the effects of temperature on the energy levels in a single doped QW [42], whereas Dhafer et al showed the importance of an inserted δ-InGaAs layer in a single Al x Ga y In 1−x−y As QW. They found that the inserted layer can improve the intensity of the optical gain which is a requirement for fiber-optical communications [43]. J. Osvald studied the effect of a non-central δ-doping layer on the energy levels and electronic density in GaAs QWs [44].…”