Proposal of New Polishing Mechanism Based on Feret's Diameter of Contact Area between Polishing Pad and Wafer

Isobe, Akira; Akaji, Masatoshi; Kurokawa, Shuhei

doi:10.7567/jjap.52.126503

Cited by 19 publications

(7 citation statements)

References 25 publications

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“…In this study, to explain the different effects of PS/CeO 2 and CeO 2 on polishing quality, the S 0 and the δ w were quantitatively calculated based on the contact-area theory 55,56 and the indentationdepth theory, 57 respectively. Table I shows that compared with CeO 2 , PS/CeO 2 could result in a larger contact area (because of the lower Young's modulus of PS/CeO 2 ) but larger indentation depth (due to the little size of CeO 2 ).…”

Section: Discussionmentioning

confidence: 99%

Polystyrene/CeO₂Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness

Gao

Zhai

et al. 2020

ECS J. Solid State Sci. Technol.

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Polystyrene (PS)/CeO 2 core/shell abrasives with different shell thicknesses were synthesized and exploited to obtain high-quality 4H-SiC surface in electro-chemical mechanical polishing (ECMP). The synthesized PS/CeO 2 abrasives were observed by a scanning electron microscope (SEM); the results showed PS/CeO 2 with a similar core (200 nm) but different shell thicknesses (8.5, 15.5, 20.5 and 27.5 nm) were obtained. Young's moduli of these abrasives were measured by an atomic force microscopy (AFM) considering the bottom deformation of abrasives. The effects of shell thickness on the contact area between the abrasive and the wafer surface, and on the indentation depth of the abrasive into the wafer surface were calculated. The indentation depth, representing surface quality, was compared with the surface roughness obtained from the following ECMP verification tests. The results characterized by a microscope and an AFM showed that surface quality polished by PS/CeO 2 (little scratches; R a : 2.388-3.181 nm) was better than that polished by CeO 2 (many scratches; R a : 3.661 nm), and that effects of shell thickness on polishing quality agreed well with the established theoretical model. Mechanisms of improving surface quality polished by core/shell abrasives and the effects of shell thickness on polishing quality were explained by the applied elastic-contact theoretical model.

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Section: Discussionmentioning

confidence: 99%

Polystyrene/CeO₂Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness

Gao

Zhai

et al. 2020

ECS J. Solid State Sci. Technol.

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“…The feasibility of the in situ observation of the polishing efficiency was confirmed by the polishing experiment with a polishing pad. According to Isobe's polishing model [136], they suggested that the in situ detection of instantaneous temperature variations depending on Feret's diameters of the contact area between the pad and the wafer, leading to higher material removal rate [131]. As they mentioned, it is very difficult to directly measure the change in the temperature at the particlewafer-pad interface due to the limitation of the proposed method.…”

Section: Number Of Particles Particle Velocitymentioning

confidence: 99%

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Seo

2021

Journal of Materials Research

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As the minimum feature size of integrated circuit elements has shrunk below 7 nm, chemical mechanical planarization (CMP) technology has grown by leaps and bounds over the past several decades. There has been a growing interest in understanding the fundamental science and technology of CMP, which has continued to lag behind advances in technology. This review paper provides a comprehensive overview of various chemical and mechanical phenomena such as contact mechanics, lubrication models, chemical reaction that occur between slurry components and films being polished, electrochemical reactions, adsorption behavior and mechanism, temperature effects, and the complex interactions occurring at the wafer interface during polishing. It also provides important insights into new strategies and novel concepts for next‐generation CMP slurries. Finally, the challenges and future research directions related to the chemical and mechanical process and slurry chemistry are highlighted.

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“…As shown in Fig. 16 (a), the abrasives are accumulated due to the friction against the wafer (Boumyoung Park, et al, 2009) (Xuesong Han, et al, 2009 and the accumulated abrasives effectively work for polishing at the actual contact points (Akira Isobe, et al, 2013). On the other hand, Fig.…”

Section: Effects Of Slurry Film Thickness At the Contact Interface Onmentioning

confidence: 99%

Analysis of sapphire- chemical mechanical polishing using digital image processing

Uneda

Takano

Koyama

et al. 2016

Mechanical Engineering Journal

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This study investigated the contact interf ace behavior between a wafer and a polishing pad in sapphirechemical mechanical polishing (CMP) for considering the improvement of the removal rate. In our previous study we clarified that the linear velocity ratio, defined as the ratio of slurry flow velocity to pad linear velocity, remarkably affected the stability of the removal rate. The effect of the linear velocity ratio was discussed from the viewpoints of the slurry type. It was found that the slurry type changed the slurry film thickness between the wafer and the polishing pad. The relationship between the slurry film thickness and the surface asperity of the polishing pad was found to affect the linear velocity and the removal rate. As a result, we concluded the linear velocity ratio was an effective parameter for considering the CMP mechanism.

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Proposal of New Polishing Mechanism Based on Feret's Diameter of Contact Area between Polishing Pad and Wafer

Cited by 19 publications

References 25 publications

Polystyrene/CeO₂Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness

Polystyrene/CeO₂Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Analysis of sapphire- chemical mechanical polishing using digital image processing

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Proposal of New Polishing Mechanism Based on Feret's Diameter of Contact Area between Polishing Pad and Wafer

Cited by 19 publications

References 25 publications

Polystyrene/CeO2Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness

Polystyrene/CeO2Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness

A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Analysis of sapphire- chemical mechanical polishing using digital image processing

Contact Info

Product

Resources

About

Polystyrene/CeO₂Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness

Polystyrene/CeO₂Core/Shell Abrasives for High-Quality 4H-SiC Surface in ECMP: The Effects of Shell Thickness