Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off 0.2V, and hysteresis-free strategies

Lee, M. H.; Chen, P.-G.; Liu, C.; Chu, K-Y.; Cheng, Chun-Hu; Xie, M.-J.; Liu, S.-N.; Lee, J.-W.; Huang, Shao Jia; Liao, Ming-Han; Tang, M.; Li, K.-S.; Chen, M.-C.

doi:10.1109/iedm.2015.7409759

Cited by 76 publications

(29 citation statements)

References 7 publications

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“…The reported experiments on NCFETs mainly include PbZrTiO 3 (PZT), P(VDF-TrFE) and HfZrO x (HZO) [11][12][13][14][15][16][17]. However, the high process temperature and undesired gate leakage current along the grain boundaries of polycrystalline ferroelectric materials have restricted their development for the state-of-the-art technology nodes [18][19][20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 99%

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

et al. 2021

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Here we report the ZrOx-based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V VGS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of the Ge/ZrOx/TaN capacitors is proposed to be originated from the oxygen vacancy dipoles. The NC effect of the amorphous HfO2 and ZrOx films devices can be proved by the sudden drop of gate leakage, the negative differential resistance (NDR) phenomenon, the enhancement of IDS and sub-60 subthreshold swing. 5 nm ZrOx-based NCFETs achieve a clockwise hysteresis of 0.24 V, lower than 60 mV/decade SS and an 12% IDS enhancement compared to the control device without ZrOx. The suppressed NC effect of Al2O3/HfO2 NCFET compared with ZrOx NCFET is related to the partial switching of oxygen vacancy dipoles in the forward sweeping due to negative interfacial dipoles at the Al2O3/HfO2 interface.

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Section: Introductionmentioning

confidence: 99%

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

et al. 2021

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“…The ferroelectric negative capacitance field-effect transistor (NCFET) with a ferroelectric film inserted into gate stack is a promising candidate for the low-power dissipation applications owing to its ability to overcome the fundamental limitation in subthreshold swing (SS) for the conventional metal-oxide-semiconductor field-effect transistor (MOSFET) [1]. The negative capacitance (NC) phenomena in NCFETs have been extensively studied in different channel materials, including silicon (Si) [2, 3], germanium (Ge) [4], germanium-tin (GeSn) [5], III–V [6], and 2D materials [7]. Also, the NC characteristics have been demonstrated in NCFETs with various ferroelectrics, such as BiFeO 3 [8], PbZrTiO 3 (PZT) [9], PVDF [10], and Hf 1− x Zr x O 2 [11].…”

Section: Introductionmentioning

confidence: 99%

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2

et al. 2019

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Germanium (Ge) negative capacitance field-effect transistors (NCFETs) with various Zr compositions in Hf 1− x Zr x O 2 ( x = 0.33, 0.48, and 0.67) are fabricated and characterized. For each Zr composition, the NCFET exhibits the sudden drop in some points of subthreshold swing (SS), which is induced by the NC effect. Drive current I DS increases with the increase of annealing temperature, which should be due to the reduced source/drain resistance and improved carrier mobility. The steep SS points are repeatable and stable through multiple DC sweeping measurement proving that they are induced by the NC effect. The values of gate voltage V GS corresponding to steep SS are consistent and clockwise I DS - V GS are maintained through the multiple DC sweeps. At fixed annealing temperature, NC device with Hf 0.52 Zr 0.48 O 2 achieves the higher I DS but larger hysteresis compared to the other compositions. NCFET with Hf 0.67 Zr 0.33 O 2 can obtain the excellent performance with hysteresis-free curves and high I DS .

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“…erroelectric negative capacitance (NC) has been proposed as a promising method to overcome the Boltzmann limit for next-generation energy-efficient transistors 1,2 . Steep-slope transistors, with subthreshold swing (SS) below 60 mV/dec due to the NC effect during ferroelectric polarization switching, have been experimentally demonstrated in recent years [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17] . From the viewpoint of the phase of impedance, the behavior of NC seems to be "inductance-like" 3 .…”

mentioning

confidence: 99%

Negative capacitance from the inductance of ferroelectric switching

et al. 2019

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Negative capacitance (NC) has been proposed to realize sub-Boltzmann steep-slope transistors in recent years. We provide experimental evidences and theoretical view for ferroelectric NC and inductance induced by polarization switching, based on an as-deposited nanoscale ferroelectric zirconium oxide (ZrO 2) layer (nano-f-ZrO 2). The experimental results are demonstrated in nano-f-ZrO 2 , including resistor-inductor-capacitor oscillations, positive reactance in Nyquist impedance plot, enhancement of capacitance, and sub-60 mV/dec subthreshold swing of nanoscale transistors. The theoretical analysis shows that ferroelectric polarization switching yields an effective electromotive force which is similar in behavior to Lenz's law, leading to inductive and NC responses. Nano-beam electron diffraction reveals ferroelectric multi-domains in nano-f-ZrO 2. Under small-signal operation, the switching of net polarization variation in ferroelectric multi-domains contributes to the ferroelectric inductance and NC. Nano-f-ZrO 2 provides a pronounced inductance compared to conventional inductors, which would have impacts in a variety of applications including transistors, filters, oscillators, and radio-frequency-integrated circuits.

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Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SSfor=42mV/dec, SSrev=28mV/dec, switch-off 0.2V, and hysteresis-free strategies

Cited by 76 publications

References 7 publications

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior

Germanium Negative Capacitance Field Effect Transistors: Impacts of Zr Composition in Hf1−xZrxO2

Negative capacitance from the inductance of ferroelectric switching

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