Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth

Abstract

Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic polytype have been achieved. The high supersaturation was kept stable by the proper design of the hot zone that enables a high axial temperature gradient at the growth interface. The Sirich gas phase was realized by the application of a Tantalum getter that was integrated into the graphitebased growth cell. Furthermore, an adaption of the growth setup allowed the growth of 3C material with a diameter of 95 mm and bulk material up to 3 mm on 25 mm diameter. Computer simulations were used to determine the supersaturation of the growth setup for different source-to-seed distances. The minimum supersaturation necessary for stable growth of cubic SiC was found to be higher 0.1 for seed already containing the required 3C polytype.

Overgrowth of Protrusion Defects during Sublimation Growth of Cubic Silicon Carbide Using Free-Standing Cubic Silicon Carbide Substrates

“…While the surface morphology shows no changes, the dimension of the pyramidal protrusion defects increases. The lateral expansion of these defects with increasing layer thickness is related to the structure of this defect and has been described in previous studies. , …”

“…The lateral expansion of these defects with increasing layer thickness is related to the structure of this defect and has been described in previous studies. 24,25 Protrusion defects represent one of the major challenges in exploiting the 3C-SiC material system. The origin of these defects is due to the fabrication of the seed layers for sublimation growth.…”

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

“…For the merging, a carbon glue with the main component of 1-Methoxy-2-propanol acetate [ 31 ] was used and both a combined heat and pressure treatment was applied. After the merging, residues of the carbon glue that could remain on top of the growth caused by an overflow of the glue were removed to maintain a high-quality starting point for the sublimation growth [ 38 ].…”

Novel Photonic Applications of Silicon Carbide

“…By eliminating the low melting point of Si (1419 °C), the seeding stacks are suitable for the use in high-temperature sublimation growth processes, such as close space PVT (CS-PVT). Further information regarding the CS PVT setup can be found in [ 141 ] and chapter 5 of [ 142 ].…”