Prospects of Doped Sb–Te Phase-Change Materials for High-Speed Recording

Lankhorst, Marc M.; Pieterson, L. van; Schijndel, M. van; Jacobs, B.A.J.; Rijpers, J. C. N.

doi:10.1143/jjap.42.863

Cited by 144 publications

(65 citation statements)

References 3 publications

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“…[11][12][13][14] Among them doped alloys derived from "eutectic" Sb x Te, showing a growth-dominant crystallization behavior, appear the most obvious choice for both high data transfer rate and high-density recording. [15][16][17][18][19][20] These materials are currently used in optical disk formats including DVD+ RW, DVD-RW, Blu-ray disk, 21 and HD-DVD, 22 and are also proposed for the line concept PRAM. 23 A good trade-off between crystallization speed and data retention time is also expected in these materials, as they appear to have a high activation energy for crystallization.…”

Section: Influence Of Capping Layers On the Crystallization Of Doped mentioning

confidence: 99%

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Pandian

Kooi

Hosson

et al. 2006

Journal of Applied Physics

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Isothermal crystallization of doped Sb x Te fast-growth phase-change films, with and without capping layers, was investigated using transmission electron microscopy, which provided direct and quantitative information on nucleation and growth processes separately. Two types of amorphous dielectric layers, ZnS -SiO 2 and GeCrN, were used for sandwiching the Sb x Te films to form typical trilayer stacks, which are the active part in applications. The nucleation and growth parameters of Sb x Te films were found to be influenced by the dielectric capping layers. The crystal growth rate is temperature dependent and it reduces when the film is sandwiched between the dielectric layers. The reduction in growth rate differs with the capping layer type. The capping layer influence on the growth rate is pronounced at lower temperatures ϳ160°C, but tends to vanish at higher temperatures ϳ200°C. The activation energy for crystal growth is 2.4± 0.3 eV for an uncapped film and it increases ϳ40% when the capping layers, GeCrN or ZnS -SiO 2 , are added. A temperature and time dependent nucleation rate is found and it is accelerated ϳ1.7 times by GeCrN layers, whereas it is retarded ϳ5 times by ZnS -SiO 2 layers. The activation energy for crystal nucleation is 6.1± 0.4 eV for an uncapped film and it is not noticeably altered by the capping layers. These variations observed in the crystallization kinetics are attributed to variations in interface energy between the phase-change film and the capping layers or vacuum and the confinement effect by the capping layers on the phase-change film.

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Section: Influence Of Capping Layers On the Crystallization Of Doped mentioning

confidence: 99%

Influence of capping layers on the crystallization of doped SbxTe fast-growth phase-change films

Pandian

Kooi

Hosson

et al. 2006

Journal of Applied Physics

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“…[9] In this paper, we describe the use of Sb-rich GaTeSb materials. Sb-rich thin films, such as a doped SbTe composition, [10,11] have been elucidated to possess a growth-dominated crystallization behavior instead of a nucleation dominated one. [12,13] This allows even thin films to crystallize at higher speeds.…”

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confidence: 99%

Ga₂Te₃Sb₅—A Candidate for Fast and Ultralong Retention Phase‐Change Memory

et al. 2009

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Incongruent melting phenomenon shows the feasibility of multilevel control using the phase‐change material Ga2Te3Sb5 (Ga‐TS). Electrical results showed that Ga‐TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase‐change random‐access‐memory applications.

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“…Besides Sb 2 Te 3 , also Sb 2 Te offers suitable properties when combined with fractions of silver and indium, for instance, yielding the widely employed AgInSbTe (abbrev. AIST) [8]. Finally, another material family that has attracted considerable interest in the last years is found here, namely modifications of antimony such as Ge 15 Sb 85 [9,10].…”

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confidence: 87%