Incongruent melting phenomenon shows the feasibility of multilevel control using the phase‐change material Ga2Te3Sb5 (Ga‐TS). Electrical results showed that Ga‐TS cells require 25% less RESET current than do GST cells. Meanwhile it possesses a high programming speed, ultralong data retention extrapolated to one million years at 120 °C, and superior thermal properties for phase‐change random‐access‐memory applications.

A novel phase-change memory cell with a doubleconfinement structure was proposed and fabricated in this work. By having an additional bottom Ge 2 Sb 2 Te 5 layer under the electrically confined active region, the heat loss can be effectively prevented. The temperature uniformity over the active region significantly improves and so does the thermal efficiency. Therefore, a low I RESET of about 0.3 mA and a reset power can be achieved. For the SET performance, a pulsewidth as low as 200 ns can be used without compromising the R SET .

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