Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure

Chao, Der-Sheng; Chen, Yi-Chan; Chen, F.; Chen, Ming-Jung; Yen, P.H.; Lee, Chain-Ming; Chen, Wei-Su; Lien, Chenhsin; Kao, Ming-Jer; Tsai, Ming-Jinn

doi:10.1109/led.2007.906084

Cited by 22 publications

(10 citation statements)

References 11 publications

(11 reference statements)

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“…For the total programming power shown in the inset, this stronger dependence is cancelled by the inverse relationship with the electrical cell resistance, and all curves fall roughly on the same trend. Although our default material parameter set is somewhat generic, and not fit to any particular test structure, the confined GST cells of [12] and [19] demonstrate a very similar trend to our model when L NW is fixed [symbols in Fig. 3(a)].…”

Section: Sensitivity Analysis and Discussionmentioning

confidence: 91%

“…We include TBR at material interfaces, and the model enables the calculation of the RESET current and the exact location of the peak temperature in a device without a priori assumptions about the latter. In particular, we focus on the nanopore-like [12], [13], [19] or nanowire (NW) [14], [15] device layout, which is thought to exhibit the best thermal confinement, and take advantage of the cylindrical symmetry for efficient modeling. We benchmark our compact model with FE simulations in both steady-state and transient (nanosecond time scale) conditions.…”

Section: Introductionmentioning

confidence: 99%

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Compact Thermal Model for Vertical Nanowire Phase-Change Memory Cells

Chen

Pop

2009

IEEE Trans. Electron Devices

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We introduce a compact model for the temperature distribution in cylindrical nanowire (NW) phase-change memory (PCM) cells for both transient (nanoseconds) and steady-state time scales. The model takes advantage of the symmetry of the cell to efficiently calculate temperature distribution dependence on geometry and material/interface properties. The results are compared with data from the literature and with finite-element simulations, showing improved computation speed by two orders of magnitude. Programming current sensitivity to cell dimensions and material properties is investigated, indicating that NW diameter (D) and thermal boundary resistance (TBR) play the strongest role in enhancing PCM energy efficiency.

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Section: Sensitivity Analysis and Discussionmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Compact Thermal Model for Vertical Nanowire Phase-Change Memory Cells

Chen

Pop

2009

IEEE Trans. Electron Devices

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“…26 The low thermal conductivity of crystalline GST 27 can minimize the heat losses and, therefore, achieve the low RESET current and writing power. 28 Moreover, GST can be used as a thermoelectric heater and thermal barrier to improve the memory performance. 29,30 However, low-voltage programming adversely affects the retention characteristics of chalcogenide-based CBRAM devices, giving rise to the voltage-time dilemma.…”

Section: Introductionmentioning

confidence: 99%

Forming-free, bi-directional polarity conductive-bridge memory devices with Ge2Sb2Te5 solid-state electrolyte and Ag active electrode

Huang

Chen

et al. 2015

Journal of Applied Physics

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Preparation and characteristics of conductive-bridge random access memory devices containing Ge2Sb2Te5 (GST) chalcogenide as the solid-state electrolyte, Ag as the active electrode, and W-Ti as the counter electrode are presented. As revealed by the electrical measurement, only the samples containing crystalline GST exhibited the resistive switching behaviors. With an insertion of ZnS-SiO2 dielectric layer at the Ag/GST interface and a postannealing at 100 °C for 1 min, the sample exhibited the best electrical performance with satisfactory cycleability and retention properties. Moreover, the forming-free and bi-directional polarity features were observed in such a sample type. Microstructure and composition analyses found the finely dispersed nano-scale Ag clusters in GST and, when electrical bias is applied, the migrating Ag ions may build up the connections in between neighboring Ag clusters. Moreover, grain boundaries in polycrystalline GST might be the main paths for Ag migration. The thread-like conduction channels in GST hence form, leading to the low resistance state of sample. On the contrary, the depletion of Ag in GST broke the connections in between Ag clusters when the electrical bias is reversed. This led to the rupture of conduction channels and, hence, the high resistance state of sample. The low operational voltage, forming-free, and bi-directional polarity features observed in (AZGW)T sample might also originated from the fine dispersion of Ag clusters in GST electrolyte.

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“…Porelike [217] Partial confined [218] Phase change line [163] Phase change bridge [51] Dash-type [219] Phase change dash [43] 3D Xpoint [17] Moreover, optimizations of the heater material itself and thickness are proven to allow a reduction of the operating current, leaving room for further improvements. The µ-trench architecture has been integrated in a 90-nm 128-Mb array with programming currents of 0.3 mA of the storage element, which demonstrates the suitability of this structure for the production of high-density PCRAM arrays.…”

Section: Volumeminimizedmentioning

confidence: 99%

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

Liu

Wei

et al. 2021

Chinese Phys. B

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The era of information explosion is coming and information need to be continuously stored and randomly accessed over long-term periods, which constitute an insurmountable challenge for existing data centers. At present, computing devices use the von Neumann architecture with separate computing and memory units, which exposes the shortcomings of “memory bottleneck”. Nonvolatile memristor can realize data storage and in-memory computing at the same time and promises to overcome this bottleneck. Phase-change random access memory (PCRAM) is called one of the best solutions for next generation non-volatile memory. Due to its high speed, good data retention, high density, low power consumption, PCRAM has the broad commercial prospects in the in-memory computing application. In this review, the research progress of phase-change materials and device structures for PCRAM, as well as the most critical performances for a universal memory, such as speed, capacity, and power consumption, are reviewed. By comparing the advantages and disadvantages of phase-change optical disk and PCRAM, a new concept of optoelectronic hybrid storage based on phase-change material is proposed. Furthermore, its feasibility to replace existing memory technologies as a universal memory is also discussed as well.

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Enhanced Thermal Efficiency in Phase-Change Memory Cell by Double GST Thermally Confined Structure

Cited by 22 publications

References 11 publications

Compact Thermal Model for Vertical Nanowire Phase-Change Memory Cells

Compact Thermal Model for Vertical Nanowire Phase-Change Memory Cells

Forming-free, bi-directional polarity conductive-bridge memory devices with Ge2Sb2Te5 solid-state electrolyte and Ag active electrode

Universal memory based on phase-change materials: From phase-change random access memory to optoelectronic hybrid storage*

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