Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

Kang, B. S.; Wang, H. T.; Lele, Tanmay P.; Tseng, Yu‐Chih; Ren, F.; Pearton, S. J.; Johnson, J. W.; Rajagopal, P.; Roberts, John C.; Piner, E. L.; Linthicum, K. J.

doi:10.1063/1.2772192

Cited by 104 publications

(72 citation statements)

References 24 publications

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“…We (Shapiro et al 2007;Gupta et al 2008) and others (Kang et al 2007) have shown that the classical dismissal of planar bioFETs for protein sensing in biological buffers/fluids (Bergveld 1991;Schoening & Poghossian 2002) is inappropriate. However, the classical assessment of bioFET feasibility is correct in asserting that the distances between analyte charges and semiconductor surfaces and buffer salt concentration are inversely related to signal intensity (Gupta et al 2008).…”

Section: Introductionmentioning

confidence: 99%

Nanoscale adhesion, friction and wear studies of biomolecules on silane polymer-coated silica and alumina-based surfaces

Bhushan

Kwak

Gupta

et al. 2008

J. R. Soc. Interface.

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Proteins on biomicroelectromechanical systems (BioMEMS) confer specific molecular functionalities. In planar FET sensors (field-effect transistors, a class of devices whose protein-sensing capabilities we demonstrated in physiological buffers), interfacial proteins are analyte receptors, determining sensor molecular recognition specificity. Receptors are bound to the FET through a polymeric interface, and gross disruption of interfaces that removes a large percentage of receptors or inactivates large fractions of them diminishes sensor sensitivity. Sensitivity is also determined by the distance between the bound analyte and the semiconductor. Consequently, differential properties of surface polymers are design parameters for FET sensors. We compare thickness, surface roughness, adhesion, friction and wear properties of silane polymer layers bound to oxides (SiO 2 and Al 2 O 3 , as on AlGaN HFETs). We compare those properties of the film-substrate pairs after an additional deposition of biotin and streptavidin. Adhesion between protein and device and interfacial friction properties affect FET reliability because these parameters affect wear resistance of interfaces to abrasive insult in vivo. Adhesion/friction determines the extent of stickage between the interface and tissue and interfacial resistance to mechanical damage. We document systematic, consistent differences in thickness and wear resistance of silane films that can be correlated with film chemistry and deposition procedures, providing guidance for rational interfacial design for planar AlGaN HFET sensors.

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Section: Introductionmentioning

confidence: 99%

Nanoscale adhesion, friction and wear studies of biomolecules on silane polymer-coated silica and alumina-based surfaces

Bhushan

Kwak

Gupta

et al. 2008

J. R. Soc. Interface.

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“…Additionally, due to stronger polarization constants, for the same lattice strain as in AlGaN/GaN, a higher 2DEG concentration could be achieved [7][8][9][10]. This heterostructure originally developed for high-speed devices, has recently experienced a renewed interest due to its wide and tunable band gap, strong polarization and very high sensitivity of 2DEG concentration to the surface barrier that makes it feasible to be used in reduction based applications [11], solar blind UV detectors [12,13] and molecule detectors [14][15][16] is an interest of scientific research.…”

Section: Introductionmentioning

confidence: 99%

Surface properties of AlInGaN/GaN heterostructure

Minj

Skuridina

Cavalcoli

et al. 2016

Materials Science in Semiconductor Processing

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Surface structural, electronic and electrical properties of the quaternary alloy AlGaInN/GaN heterostructures are investigated. Surface termination, atomic arrangement, electronic and electrical properties of the (0001) surface and (10-11) Vdefect facets have been experimentally analyzed using various surface sensitive techniques including spectroscopy and microscopy. Moreover, the effect of sub-band gap (of the barrier layer) illumination on contact potential difference (VCPD) and the role of oxygen chemisorption have been studied.

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“…By functionalizing AlGaN/GaN HEMTs with botulinum antibodies in the gate region, we have been able to detect botulinum toxin to levels as low as 0.1 ng/ml, as shown in Figure 2 (6,7) . These sensors can be re-used after by rinsing in PBS (phosphate buffer saline) wash In a similar fashion, both Prostate Specific Antigen (PSA) (8) and breast cancer markers (c-erbB-2) (9) in saliva have been detected at clinically relevant concentrations using HEMTs functionalized with the relevant antibodies. Other biomarkers detected in breath condensate include glucose (10) and pH, as well as lactic acid, traumatic brain injury, kidney injury molecules (11) , chlorine ions (based on either InN films or AgCl deposited in the gate region) (12) and DNA in buffer solutions.…”

Section: Examples Of Gan-based Biosensorsmentioning

confidence: 99%

(The Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology Award) Wide Bandgap Semiconductors for Electronics, Photonics, and Sensing Applications

Pearton¹,

Ren²

2011

ECS Trans.

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Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs) on flexible substrates, including paper, is presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides enhances the detection sensitivity for gases and ionic solutions. The use of enzymes or antibody layers on the surface leads to highly specific detection of a range of antigens of interest in the medical and security fields. We give examples showing sensitive detection of glucose, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems. The amorphous transparent conducting oxide InZnGaO 4 (IGZO) is attracting attention because of its high electron mobility, high transparency in the visible region and its ability to be deposited with a wide range of conductivities. This raises the possibility of making low-cost electronics on a range of arbitrary surfaces, including paper and plastics. Remaining obstacles to use of IGZO TFTs are presented. Applications of GaN Based Electronics and PhotonicsOn the photonics side, the AlGaInN materials system, consisting of the AlGaN/GaN, InAlN/GaN and InGaN/GaN heterostructures and the GaN,AlN and InN binaries is widely used in blue/violet/white/UV light emitting diodes for stoplights and full color displays, blue and green lasers for use in high density CD-ROM storage and high resolution printers. The main applications for GaN-based high power microwave transistors is in phased array radar systems and wireless communication systems, while the low noise, radiation hard transistors can be used in high temperature sensors and space-flight instrumentation (1)

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Prostate specific antigen detection using AlGaN∕GaN high electron mobility transistors

Cited by 104 publications

References 24 publications

Nanoscale adhesion, friction and wear studies of biomolecules on silane polymer-coated silica and alumina-based surfaces

Nanoscale adhesion, friction and wear studies of biomolecules on silane polymer-coated silica and alumina-based surfaces

Surface properties of AlInGaN/GaN heterostructure

(The Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology Award) Wide Bandgap Semiconductors for Electronics, Photonics, and Sensing Applications

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