Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

Berdova, Maria; Wiemer, C.; Lamperti, Alessio; Tallarida, G.; Cianci, E.; Lamagna, L.; Losa, Stefano; Rossini, S.; Somaschini, R.; Gioveni, Salvatore; Fanciulli, M.; Franssila, Sami

doi:10.1016/j.apsusc.2016.01.216

Cited by 12 publications

(12 citation statements)

References 30 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…More details about the morphology and crystallinity of 20 nm-thick-HfO 2 grown at 175, 200, and 225 C can be found in Ref. 9. After annealing, HfO 2 became polycrystalline.…”

Section: Resultsmentioning

confidence: 99%

“…The monoclinic percentage is found to increase from 64% to 68% and then to 83% with increasing annealing temperature from 700 to 800 C and then to 900 C. According to ToF-SIMS, the impurities in as-grown films, nitrogen, hydrogen content (OH-groups), and carbon, were reduced as a function of deposition temperature, in accordance with our previous report. 9 Annealing resulted in more stoichiometric films in comparison with as-grown films due to a relative reduction in the hydrogen content (OH-groups) (Fig. 4).…”

Section: Resultsmentioning

confidence: 99%

“…The deposition details are reported elsewhere. 8,9 The deposition temperatures were 175, 200, and 225 C for samples with thickness of 20 nm. To study the annealinginduced changes of the film mechanical properties, four samples of 100 nm nominal thickness were grown at 175 C on Si (001) covered with 2-nm-thick chemical oxide (SiO 2 ).…”

Section: Methodsmentioning

confidence: 99%

“…4 ALD hafnium oxide (HfO 2 ) is attractive for many applications due to its high-k value, wide bandgap, optical transparency, and thermal and chemical stabilities. [5][6][7][8][9][10][11][12][13][14] Therefore, HfO 2 is attractive for a range of applications such as microelectromechanical systems (MEMS), 6,[9][10][11] complementary metal oxide semiconductor, 12 and capacitive elements in memory devices. 5,6,13,14 Mechanical properties of thin films are dependent on deposition temperature and these properties change during subsequent high temperature steps.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Berdova¹,

Liu²,

Wiemer

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

The investigation of mechanical properties of atomic layer deposition HfO 2 films is important for implementing these layers in microdevices. The mechanical properties of films change as a function of composition and structure, which accordingly vary with deposition temperature and post-annealing. This work describes elastic modulus, hardness, and wear resistance of as-grown and annealed HfO 2. From nanoindentation measurements, the elastic modulus and hardness remained relatively stable in the range of 163-165 GPa and 8.3-9.7 GPa as a function of deposition temperature. The annealing of HfO 2 caused significant increase in hardness up to 14.4 GPa due to film crystallization and densification. The structural change also caused increase in the elastic modulus up to 197 GPa. Wear resistance did not change as a function of deposition temperature, but improved upon annealing. V

show abstract

“…More details about the morphology and crystallinity of 20 nm-thick-HfO 2 grown at 175, 200, and 225 C can be found in Ref. 9. After annealing, HfO 2 became polycrystalline.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Berdova¹,

Liu²,

Wiemer

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

Self Cite

View full text Add to dashboard Cite

show abstract

“…Additionally, HfO 2 also finds applications as a protective coating for microelectromechanical systems and as insulator for organic devices such as organic light emitting diode and organic field effect transistors. [8][9][10] ALD has been the method of choice for depositing thin films of HfO 2 . The self-saturating nature of the ALD process enables atomic level control over thickness and uniformity and this makes ALD ideal for preparing ultrathin HfO 2 thin films.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

Sharma

Longo

Verheijen

et al. 2016

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

View full text Add to dashboard Cite

HfO2 thin films were prepared by plasma-enhanced atomic layer deposition using a cyclopentadienyl-alkylamido precursor [HfCp(NMe2)3, HyALD™] and an O2 plasma over a temperature range of 150–400 °C at a growth per cycle around 1.1 Å/cycle. The high purity of the films was demonstrated by x-ray photoelectron spectroscopy and elastic recoil detection analyses which revealed that by increasing the deposition temperature from 200 to 400 °C, the atomic concentrations of residual carbon and hydrogen reduced from 1.0 to <0.5 at. % and 3.4 to 0.8 at. %, respectively. Moreover, Rutherford backscattering spectroscopy studies showed an improvement in stoichiometry of HfO2 thin films with the increase in deposition temperature, resulting in Hf/O ratio close to ∼0.5 at 400 °C. Furthermore, grazing incidence x-ray diffraction measurements detected a transition from amorphous at the deposition temperature of 300 °C to fully polycrystalline films at 400 °C, consisting of a mixture of monoclinic, tetragonal, and cubic phases. Finally, the surface morphology and conformality of HfO2 thin films studied by atomic force microscopy and transmission electron microscopy are also reported.

show abstract

Atomic layer deposition of ultrafine Pd nanoparticles for enhancing the rate capability of LiNi0.8Co0.1Mn0.1O2 cathode

Feng³

et al. 2022

Tungsten

View full text Add to dashboard Cite

Protective coatings of hafnium dioxide by atomic layer deposition for microelectromechanical systems applications

Cited by 12 publications

References 30 publications

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Atomic layer deposition of HfO2 using HfCp(NMe2)3 and O2 plasma

Atomic layer deposition of ultrafine Pd nanoparticles for enhancing the rate capability of LiNi0.8Co0.1Mn0.1O2 cathode

Contact Info

Product

Resources

About