Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Berdova, Maria; Liu, Xuwen; Wiemer, C.; Lamperti, Alessio; Tallarida, G.; Cianci, E.; Fanciulli, M.; Franssila, Sami

doi:10.1116/1.4961113

Cited by 37 publications

(26 citation statements)

References 24 publications

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“…We again note the extremely low value of 74 ± 1 GPa reported by Ilic for a 21 nm ALD HfO 2 film 61 indicated a mass density of 6.1 ± 0.1 g/cm 3 , substantially reduced relative to the values of 9.7-9.8 g/cm 3 reported for the other ALD HfO 2 films with considerably higher Young's modulus values. 60,251,252 This may be related to the extremely small thickness for the Ilic HfO 2 film relative to the other studies (60-200 nm). Even so, Zizka 253 determined a substantially higher density (9.8 g/cm 3 ) and modulus (166 ± 10 GPa) for an ALD HfO 2 film of similar thickness.…”

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confidence: 80%

“…• C. 251 Thus, while the measured CTE values can be reasonably explained by literature precedent, the grain orientation (or lack of orientation) in ALD HfO 2 films is likely highly dependent on the film thickness and specific growth conditions. This of course neglects the possible presence of anisotropy in the Young's modulus of the ALD HfO 2 film.…”

Section: 290mentioning

confidence: 91%

“…• C. 251,252 For such films, both authors observed a significant increase in both Young's modulus and hardness (10-35%) that they attributed to increased densification and crystallization of the ALD films. Regarding the Young's modulus for the ALD HfO 2 film in this study exceeding those reported for other ALD HfO 2 films, we note that the higher deposition temperature (>300…”

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confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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Atomic layer deposited (ALD) high-dielectric-constant (high-k) materials have found extensive applications in a variety of electronic, optical, optoelectronic, and photovoltaic devices. While electrical, optical, and interfacial properties have been the primary consideration for such devices, thermal and mechanical properties are becoming an additional key consideration for many new and emerging applications of ALD high-k materials in electromechanical, energy storage, and organic light emitting diode devices. Unfortunately, a clear correspondence between thermal/mechanical and electrical/optical properties in ALD high-k materials has yet to be established, and a detailed comparison to conventional silicon-based dielectrics to facilitate optimal material selection is also lacking. In this regard, we have conducted a comprehensive investigation and review of the thermal, mechanical, electrical, optical, and structural properties for a series of prevalent and emerging ALD high-k materials including aluminum oxide (Al 2 O 3 ), aluminum nitride (AlN), hafnium oxide (HfO 2 ), and beryllium oxide (BeO). For comparison, more established silicon-based dielectrics were also examined, including thermally grown silicon dioxide (SiO 2 ) and plasma-enhanced chemically vapor deposited hydrogenated silicon nitride (SiN:H). We find that in addition to exhibiting high values of dielectric permittivity and electrical resistance that exceed those of SiO 2 and SiN:H, the ALD high-k materials exhibit equally exceptional thermal and mechanical properties with coefficients of thermal expansion ≤ 6 × 10 -6 / • C, thermal conductivites (κ) of 3-15 W/m K, and Young's modulus and hardness values exceeding 200 and 25 GPa, respectively. In many cases, the observed extreme thermal/mechanical properties correlate with the presence of crystallinity in the ALD high-k films. In contrast, some of the electrical and optical properties correlate more strongly with the percentage of ionic vs. covalent bonds present in the high-k film. Overall, the ALD high-k dielectrics investigated concurrently exhibit compelling thermal/mechanical and electrical/optical properties. The drive to reduce gate leakage currents in highly scaled complementary metal-oxide-semiconductor (CMOS) transistors has led to the exploration and development of a wide variety of high-dielectricconstant (high-k) materials to replace silicon dioxide (SiO 2 ) as the insulating gate dielectric material.1-8 Many of these same high-k materials have found additional applications in future non-CMOS logic and memory storage products such as solid-state electrolytes in resistive switching devices, 9,10 tunnel barriers in spin-transport devices, 11 and as a ferroelectric in magnetoelectric devices. While electrical, physical, and thermodynamic properties have clearly been a key consideration in all of the above applications, thermal properties have become an additional important consideration for higk-k dielectrics as aggressive dimensional scaling of devices has created the need to dissipate ...

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confidence: 80%

Section: 290mentioning

confidence: 91%

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confidence: 99%

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Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Gaskins

Hopkins

Merrill

et al. 2017

ECS J. Solid State Sci. Technol.

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“…On the other hand, Tapily et al [37] showed that the atomic layer deposition (ALD) method leads to the formation of HfO 2 film with a hardness and elastic modulus equal 9.5 and 220 GPa, respectively. Moreover, Berdova et al [58] showed that in the ALD method, there is a direct impact of the deposition temperature on the mechanical properties of the HfO 2 thin films. The hardness and elastic modulus were slightly reduced in a function of the growing deposition temperature from 9.7 to 8.3 GPa, and 165 to 163 GPa, respectively [58].…”

Section: Mechanical Propertiesmentioning

confidence: 99%

“…Moreover, Berdova et al [58] showed that in the ALD method, there is a direct impact of the deposition temperature on the mechanical properties of the HfO2 thin films. The hardness and elastic modulus were slightly reduced in a function of the growing deposition temperature from 9.7 to 8.3 GPa, and 165 to 163 GPa, respectively [58]. Leyland and Matthews [59] proved that in the classical theory of wear, hardness is the primary material property that defines wear resistance.…”

Section: Mechanical Propertiesmentioning

confidence: 99%

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

et al. 2019

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The aim of this work is to determine the influence of medium frequency magnetron sputtering powers on the various properties of hafnium dioxide (HfO2) thin films. Microstructure observations show that an increase in the sputtering power has a significant influence on HfO2 films’ microstructure. As-deposited hafnia thin films exhibit nanocrystalline structure with a monoclinic phase, however thr rise of the sputtering power results in an increase of crystallite sizes. Atomic force microscopy investigations show that the surface of the deposited films is smooth, crack-free, and composed of visible grains. The surface roughness and the value of the water contact angle increase with the increase of the sputtering power. Measurements of the optical properties show that HfO2 coatings are transparent in the visible wavelength range. A higher sputtering power causes a decrease of an average transmittance level and a simultaneous increase of the real part of the refractive index. Nanoindentation measurements reveal that the thin film hardness and Young’s elastic modulus increase with an increase in the sputtering power. Moreover, the results of plasticity index H/E and plastic resistance parameter H3/E2 are discussed. Based on the obtained results, a correlation between the sputtering power and the structural, surface, and optical properties, as well as the hardness and Young’s elastic modulus, were determined.

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Photoelectrochemistry and Nanogravimetry of Si and Si ‐Oxide Electrodes

2022

Silicon

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Hardness, elastic modulus, and wear resistance of hafnium oxide-based films grown by atomic layer deposition

Cited by 37 publications

References 24 publications

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Review—Investigation and Review of the Thermal, Mechanical, Electrical, Optical, and Structural Properties of Atomic Layer Deposited High-kDielectrics: Beryllium Oxide, Aluminum Oxide, Hafnium Oxide, and Aluminum Nitride

Characterization of HfO2 Optical Coatings Deposited by MF Magnetron Sputtering

Photoelectrochemistry and Nanogravimetry of Si and Si ‐Oxide Electrodes

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