Protein‐Based Memristive Nanodevices

Meng, Fanben; Jiang, Lin; Zheng, Keyan; Goh, Chin Foo; Lim, Sierin; Hng, Huey Hoon; Ma, Jan; Boey, Freddy; Chen, Xiaodong

doi:10.1002/smll.201101494

Cited by 71 publications

(82 citation statements)

References 55 publications

(77 reference statements)

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“…[ 2 ] Since memristors can achieve both high integration density and low switching power consumption thanks to high scalability down to only a few nanometers, they have been one of the most attractive devices for next-generation memory technology. [ 3 ] Various materials with switchable and retainable resistance have been used to realize the memristor memory, including proteins, [ 4,5 ] TiO 2 , [ 6 ] polyaniline, [ 7 ] Si, [ 8 ] MgO, [ 9,10 ] and VO 2 . [11][12][13][14] VO 2 is one of the most notable materials owing to its fast response time and large range of accessible resistance values through a metal-to-insulator transition (MIT).…”

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confidence: 99%

The Memristive Properties of a Single VO₂ Nanowire with Switching Controlled by Self‐Heating

et al. 2013

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A two-terminal memristor memory based on a single VO2 nanowire is reported that can not only provide switchable resistances in a large range of about four orders of magnitude but can also maintain the resistances by a low bias voltage. The phase transition of the single VO2 nanowire was driven by the bias voltage of 0.34 V without using any heat source. The memristive behavior of the single VO2 nanowire was confirmed by observing the switching and non-volatile properties of resistances when voltage pulses and low bias voltage were applied, respectively. Furthermore, multiple retainable resistances in a large range of about four orders of magnitude can be utilized by controlling the number and the amount of voltage pulses under the low bias voltage. This is a key step towards the development of new low-power and two-terminal memory devices for next-generation non-volatile memories.

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confidence: 99%

The Memristive Properties of a Single VO₂ Nanowire with Switching Controlled by Self‐Heating

et al. 2013

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“…[151][152][153] Natural biomaterials, especially proteins, open up new opportunities for resistive-switching memory devices by endowing them with outstanding properties, such as mechanical fl exibility, biocompatibility, and light-weight, which renders them suitable for applications in biocompatible data-storage devices and biointegrated electronics. [ 32,[159][160][161][162][163][164] Silk protein exhibits more appealing properties compared with other biocompatible materials, such as ferritin, [ 159 ] cellulose, [ 165 ] and DNA, [ 166,167 ] for resistive-switching memory applications duo to its advantageous properties, such as mechanical robustness, fl exibility in thin-fi lm form, optical transparency, and compatibility with aqueous processing. [ 32,168 ] Silk-fi broin fi lms exhibited bipolar memristive switching behavior in a device with an indium tin oxide (ITO)/ fi broin/Al sandwich structure, with an OFF/ON ratio of 10 and retention time of 10 3 s. [ 78 ] The resistive switching of the above memristor was further studied at the microscopic scale, [ 169 ] which revealed that the current conduction process is dominated by fi lamentary conduction during LRS, and trap-assisted current conduction when in the HRS.…”

Section: Resistive-switching Memory Devicesmentioning

confidence: 99%

Silk Fibroin for Flexible Electronic Devices

et al. 2015

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Flexible electronic devices are necessary for applications involving unconventional interfaces, such as soft and curved biological systems, in which traditional silicon-based electronics would confront a mechanical mismatch. Biological polymers offer new opportunities for flexible electronic devices by virtue of their biocompatibility, environmental benignity, and sustainability, as well as low cost. As an intriguing and abundant biomaterial, silk offers exquisite mechanical, optical, and electrical properties that are advantageous toward the development of next-generation biocompatible electronic devices. The utilization of silk fibroin is emphasized as both passive and active components in flexible electronic devices. The employment of biocompatible and biosustainable silk materials revolutionizes state-of-the-art electronic devices and systems that currently rely on conventional semiconductor technologies. Advances in silk-based electronic devices would open new avenues for employing biomaterials in the design and integration of high-performance biointegrated electronics for future applications in consumer electronics, computing technologies, and biomedical diagnosis, as well as human-machine interfaces.

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“…Finally, at sufficiently high voltage (region III), where the electrons fully occupy trap sites, an abrupt surge of current is observed, similar to the formation phenomena reported in numerous resistive switching devices. [4][5][6][7][11][12][13][14][31][32][33][34][36][37][38][39][40][41][42][43][44][45] In the present system, this abrupt turn-on is likely associated with a large local concentration of oxygen vacancies or to the development of a conducting metal (Zn) filaments with the a-ZnO layer. 33 To test the model, we have subjected HAT ZnO devices to different voltage pulse sequences.…”

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confidence: 99%

Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

et al. 2016

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In non-volatile memory technology, various attempts to overcome both technology and physical limits have led to development of neuromorphic devices like memristors. Moreover, multilevel resistance and the potential for enhanced memory capability has attracted much attention. Here, we report memristive characteristics and multilevel resistance in a hydrogen annealed ZnO nanowire device. We find that the memristive behavior including negative differential resistance arises from trapped electrons in an amorphous ZnO interfacial layer at the injection electrode that is formed following hydrogen annealing. Furthermore, we demonstrate that it is possible to control electrons trapping and detrapping by the controlled application of voltage pulses to establish a multilevel memory. These results could pave the way for multifunctional memory device technology such as the artificial neuromorphic system.

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Protein‐Based Memristive Nanodevices

Cited by 71 publications

References 55 publications

The Memristive Properties of a Single VO₂ Nanowire with Switching Controlled by Self‐Heating

The Memristive Properties of a Single VO₂ Nanowire with Switching Controlled by Self‐Heating

Silk Fibroin for Flexible Electronic Devices

Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

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Protein‐Based Memristive Nanodevices

Cited by 71 publications

References 55 publications

The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self‐Heating

The Memristive Properties of a Single VO2 Nanowire with Switching Controlled by Self‐Heating

Silk Fibroin for Flexible Electronic Devices

Multilevel resistance in ZnO nanowire memristors enabled by hydrogen annealing treatment

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The Memristive Properties of a Single VO₂ Nanowire with Switching Controlled by Self‐Heating

The Memristive Properties of a Single VO₂ Nanowire with Switching Controlled by Self‐Heating