Proton and deuteron bombarded Ga0.47In0.53As

We have measured sheet resistance and mobility changes for a series of In0.53Ga0.47As layers as a result of hydrogen, boron, and beryllium implantation. We find that boron and beryllium implantation can produce a two order-of-magnitude increase in sheet resistance due mainly to a decrease in mobility accompanied by a smaller decrease in the sheet carrier concentration. Hydrogen implantation results in a decrease in sheet resistance due to an increase in electron concentration accompanied by only a small mobility decrease. The increase in sheet resistance due to boron and beryllium implants is not large enough to have obvious application for device isolation.

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Light-ion-bombarded p-type In0.53Ga0.47As

Rao

Babu

Dietrich

et al. 1988

Journal of Applied Physics

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Multiple-energy H-, He-, and B-ion bombardments were performed to obtain uniform high resistivity over the entire thickness of p-type In0.53Ga0.47As. High resistivity, 580 Ω cm, which is close to the intrinsic resistivity limit of ≊103 Ω cm in InGaAs, is observed. The thermal stability of the high-resistance layers depended upon the mass of the implanted ion. The B-ion-implanted layers maintained high resistivity up to ≊200 °C. Photoluminesence measurements were used to obtain the energy of compensating levels produced by light-ion bombardment.

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Proton and deuteron bombarded Ga0.47In0.53As

Cited by 3 publications

References 5 publications

The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures

Resistance and mobility changes in InGaAs produced by light ion bombardment

Light-ion-bombarded p-type In0.53Ga0.47As

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