Resistance and mobility changes in InGaAs produced by light ion bombardment

Tell, B.; Brown-Goebeler, K.F.; Bridges, Thomas J.; Burkhardt, E. G.

doi:10.1063/1.337410

Cited by 28 publications

(2 citation statements)

References 14 publications

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“…Interestingly, we have achieved values of R s an order of magnitude greater than those measured by many others 11,18,29 who have used multiple-energy implantation techniques.…”

Section: Discussioncontrasting

confidence: 49%

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

Carmody

Tan

Jagadish

2003

Journal of Applied Physics

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A study of the evolution of sheet resistance of p-and n-type In 0.53 Ga 0.47 As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs as compared to p-InGaAs and was greater for samples with a higher initial free carrier concentration. Implantation with H ϩ yielded isolation behavior that was different from that for implantation with the three medium-mass ions. The thermal stability of defects induced by implantation was also investigated by cumulative annealing, and was found to be slightly higher in n-InGaAs as compared to p-InGaAs. Shallow donor production in the InGaAs epilayer during implantation played a crucial role in determining the electrical characteristics of the samples.

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“…Interestingly, we have achieved values of R s an order of magnitude greater than those measured by many others 11,18,29 who have used multiple-energy implantation techniques.…”

Section: Discussioncontrasting

confidence: 49%

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

Carmody

Tan

Jagadish

2003

Journal of Applied Physics

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“…In InP and other In-based compounds, isolation mainly caused by a damage-induced compensation mechanism is not as effective in creating thermally stable high-resistivity regions [4,5,6].…”

Section: Introductionmentioning

confidence: 99%

An effective electrical isolation scheme by iron implantation at different substrate temperatures

Too

Ahmed

Sealy

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

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Abstract-High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100 0 C and 200 0 C was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5x10 14 /cm 2 . This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R s ), sheet carrier concentration (n s ) and sheet mobility (µ) were measured as a function of substrate temperature and post-implantation annealing temperature (100 -800 0 C). Samples implanted at 77K, RT and 100 0 C show more or less the same trend of postimplant annealing characteristics. A maximum sheet resistivity of ~1x107 Ω/‫ڤ‬ was achieved for samples implanted at 77K, RT and 100 0 C after annealing at 400 0 C. A lower resistivity of ~1x106 Ω/‫ڤ‬ was obtained for a 200 0 C implant after annealing at 400 0 C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200 0 C substrate temperature, annealing above 400 0 C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures.The sheet resistivity was increased again for 77K, RT and 100 0 C implant after annealing at 600 0 C. We infer that for 77K, RT and 100 0 C implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200 0 C substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.

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Ion implantation doping and isolation of III–V semiconductors

Pearton

1991

Nuclear Instruments and Methods in Physics Research Section B:

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Resistance and mobility changes in InGaAs produced by light ion bombardment

Cited by 28 publications

References 14 publications

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

Electrical isolation of n- and p-In0.53Ga0.47As epilayers using ion irradiation

An effective electrical isolation scheme by iron implantation at different substrate temperatures

Ion implantation doping and isolation of III–V semiconductors

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