. (2017) High operational and environmental stability of high-mobility conjugated polymer fieldeffect transistors achieved through the use of molecular additives. Nature Materials, 16 (3 Copies of full items can be used for personal research or study, educational, or not-for profit purposes without prior permission or charge. Provided that the authors, title and full bibliographic details are credited, a hyperlink and/or URL is given for the original metadata page and the content is not changed in any way. challenge is now to achieve the required device uniformity for large-area 46 applications, such as displays. With conjugated polymers that show high field-effect 47

A scalable manufacturing process for fabricating active-matrix backplanes on low-cost flexible substrates, a key enabler for electronic-paper displays, is presented. This process is based on solution processing, ink-jet printing, and laser patterning. A multilayer architecture is employed to enable high aperture ratio and array performance. These backplanes were combined with E Ink electrophoretic media to create high-performance displays that have high contrast, are bistable, and can be flexed repeatedly to a radius of curvature of 5 mm

We have developed a scalable manufacturing process for active matrix displays compatible with low temperature plastic substrates and have applied this technology to the fabrication of flexible SVGA display backplanes. We combined these backplanes with E Ink® Imaging Film to produce 100 PPI SVGA (800×600 pixel) displays exhibiting grey scale and with a high aperture ratio. Power consumption is zero in between image changes. Flexible high information content e‐paper displays will change the way in which information is conveyed by enabling lightweight, robust e‐reader devices.

We have investigated the degradation effects of ozone exposure on organic field-effect transistors based on 2,8difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene as the organic semiconducting channel layer, as well as on thin films of this widely used, high-mobility, small molecule semiconductor. Electrical I−V measurements showed a loss of transistor characteristic behavior. We present 1 H Nuclear Magnetic Resonance (NMR) spectroscopy results as well as Xray Photoemission Spectroscopy (XPS) and Fourier Transform Infrared (FTIR) spectroscopy measurements showing the oxidation of the parent molecule, from which we suggest various possible reaction paths.

We present organic thin film transistors (OTFT) with leakage currents below 10 -17 A/µm and compare them to existing TFT technologies. The impact of low leakage on the dynamic range of an optical sensor was modelled to demonstrate its benefit to the performance of 500ppi device.