Proton and Gamma Ray Induced Gain Degradation in Bipolar Transistor

Kulkarni, S. R.; Sarma, Asitikantha; Joshi, Gopal; Ravindra, M.; Damle, R.

doi:10.1080/1042015032000115302

Cited by 11 publications

(7 citation statements)

References 15 publications

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“…The fact that the gain of the transistor does not recover after annealing indicates that the gain degradation is predominantly due to displacement damage and surface recombination and total ionizing dose (TID) effect in the emitter-base region perhaps contribute little to gain degradation. The 24 MeV proton-induced gain degradation in npn transistor of the similar family (2N 2219A) reported earlier by our group [10] reveals that npn transistor undergoes considerable gain degradation due to displacement damage. A comparison of the gain degradation in the present pnp transistor indicates that the pnp transistor also undergoes as much degradation as that of npn transistor, which is an important observation.…”

Section: Methodsmentioning

confidence: 88%

I-V, C-V and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor

2010

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This paper describes the effect of 24 MeV proton irradiation on the electrical characteristics of a pnp bipolar junction transistor 2N 2905A. I-V , C-V and DLTS measurements are carried out to characterize the transistor before and after irradiation. The properties of deep level defects observed in the bulk of the transistor are investigated by analysing the DLTS data. Two minority carrier levels, EC -0.27 eV and EC -0.58 eV and one majority carrier level, EV + 0.18 eV are observed in the base collector junction of the transistor. The irradiated transistor is subjected to isochronal annealing. The influence of isochronal annealing on I-V , C-V and DLTS characteristics are monitored. Most of the deep level defects seem to anneal out above 400 • C. It appears that the deep level defects generated in the bulk of the transistor lead to transistor gain degradation. A comparison of proton-and electron-induced gain degradation is made to assess the vulnerability of pnp transistor as against npn transistors.

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Section: Methodsmentioning

confidence: 88%

I-V, C-V and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor

2010

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“…It is known that gain degradation in silicon bipolar transistors exposed to particle radiation is due to the production of a spectrum of primary knock-on-atoms (PKAs) and is directly related to displacement damage. However, in the case of C-irradiation, the displacement damage in silicon from 60 Co exposure can be analyzed in terms of photon induced secondary electron spectrum [14][15][16][17]. Exposure of the devices to C-radiation produces displacement damage by first generating secondary electrons.…”

Section: Resultsmentioning

confidence: 99%

60Co γ-ray induced gain degradation in bipolar junction transistors

Kulkami

Damle

2011

Indian J Phys

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: Commercial indigenously made npn and pnp bipolar junction switching transistors used for space applications are investigated for 60 Co C-ray induced effects. The on-line as well as off-line measurements indicate that the forward current gain of the transistors decreases significantly as the accumulated dose increases. Excess base current model is employed to account for the current gain degradation. The pnp transistor undergoes as much degradation as the npn type. It is found that bulk degradation by displacement damage is the dominant mechanism leading to reduction in forward current gain of npn transistors. On the other hand it appears that, in addition to bulk damage, surface degradation due to accumulation of interface states at the silicon-silicon dioxide interface also contributes significantly to gain degradation in pnp transistor as evident from thermal annealing studies. Further, estimation reveals that the transistor with larger base width has higher displacement damage factor.

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“…Oxygen is the most abundant element in the solar wind after H and He (8). The BJT used in the present study has been thoroughly studied in earlier work for 24 MeV protons, 8 MeV electrons and 60 Co γ -rays induced effects (9)(10)(11). A DLTS study of deep level defects in Li-ion irradiated transistor (chosen from the same batch) has also been reported (12).…”

Section: Introductionmentioning

confidence: 95%

I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

Madhu

Kulkarni²,

Ravindra

et al. 2008

Radiation Effects and Defects in Solids

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A commercial bipolar junction transistor (2N 2219A, npn) irradiated with 84 MeV O 6+ -ions with fluence of the order of 10 13 ions cm −2 is studied for radiation-induced gain degradation and deep-level defects or recombination centers. I-V measurements are made to study the gain degradation as a function of ion fluence. Properties such as activation energy, trap concentration and capture cross section of deep levels are studied by deep-level transient spectroscopy. Minority carrier trap energy levels with energies ranging from E C −0.17 eV to E C −0.55 eV are observed in the base-collector junction of the transistor. Majority carrier defect levels are also observed with energies ranging from E V +0.26 eV to E V +0.44 eV. The irradiated device is subjected to isothermal and isochronal annealing. The defects are seen to anneal above 250 • C. The defects generated in the base region of the transistor by displacement damage appear to be responsible for an increase in base current through Shockley-Read-Hall or multi-phonon recombination and consequent transistor gain degradation.

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Proton and Gamma Ray Induced Gain Degradation in Bipolar Transistor

Cited by 11 publications

References 15 publications

I-V, C-V and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor

I-V, C-V and deep level transient spectroscopy study of 24 MeV proton-irradiated bipolar junction transistor

60Co γ-ray induced gain degradation in bipolar junction transistors

I-V and DLTS study of generation and annihilation of deep-level defects in an oxygen-ion irradiated bipolar junction transistor

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