Proton Beam Effects on Ge–Se/Ag Thin Films

Abstract

Among the many applications of chalcogenide glasses, their involvement as an active layer in redox-conductive-bridge-memory (CBRAM) devices triggers particular interest because of their potential to replace CMOS-based NAND and flash memory. In these devices the chalcogenide glass film is in contact with a silver film, and it is of a practical interest to understand how a beam of protons can influence this dual layer structure in order to identify how the performance of the CBRAM devices will be affected. In this work we studied the influence of proton beam irradiation over a Ge 40 Se 60 /Ag film stack. Various methods of analysis including scanning atomic force microscopy (AFM), Raman spectrometry, Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD), and X-ray photoelectron spectrometry (XPS) have been applied to study the structure, topography, composition, bonding configurations, diffusion kinetics, and molecular evolution of thin films related to the active sections of CBRAM devices, and quantitative analysis of material parameters and changes is reported. The results reveal silver surface deposition and germanium oxidation, as well as change in the films chemistry as a result of proton irradiation.

The impact of fluence dependent proton ion irradiation on the structural and optical properties of Bi5In30Se65 thin films for nonlinear optical devices

“… 25 The influence of proton beam irradiation over a Ge 40 Se 60 /Ag film stack reveals silver surface deposition and germanium oxidation, and a change in the film's chemistry as a result of proton irradiation. 26 The electrical resistivity decreased with 10 MeV proton irradiation fluence in Cu(In,Ga)Se 2 thin films which is due to the reduction of the concentration of the compensating donor-like defects, specifically the selenium vacancies. 27 …”

“…25 The inuence of proton beam irradiation over a Ge 40 Se 60 /Ag lm stack reveals silver surface deposition and germanium oxidation, and a change in the lm's chemistry as a result of proton irradiation. 26 The electrical resistivity decreased with 10 MeV proton irradiation uence in Cu(In,Ga) Se 2 thin lms which is due to the reduction of the concentration of the compensating donor-like defects, specically the selenium vacancies. 27 So, in the present study, the focus was on the proton irradiation-induced modications in the structural, morphological, and optical properties of thermally evaporated Bi 5 In 30 -Se 65 thin lms caused by different irradiation uences.…”