Proton beam writing of microstructures in silicon

Breese, M.B.H.; Teo, Ee Jin; Mangaiyarkarasi, D.; Champeaux, F.; Bettiol, Andrew A.; Blackwood, Daniel John

doi:10.1016/j.nimb.2005.01.083

Cited by 22 publications

(12 citation statements)

References 32 publications

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“…From PBW experiments on Si and GaAs it is known that unirradiated material encircled by a closed irradiation pattern exhibits a reduced dissolution rate in contrast to the unirradiated material outside of the pattern [8,12]. However, in SI InP unirradiated material inside of closed irradiation pattern is dissolved (see Fig.…”

Section: Si Inpmentioning

confidence: 99%

Fabrication of microstructures in III–V semiconductors by proton beam writing

Menzel

Spemann

Lenzner

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Si Inpmentioning

confidence: 99%

Fabrication of microstructures in III–V semiconductors by proton beam writing

Menzel

Spemann

Lenzner

et al. 2009

Nuclear Instruments and Methods in Physics Research Section B:

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“…Recently, Reece et al have reported the realization of optical microcavities with sub nanometer line widths at low temperature, 50 whereas multiple narrow transmission peaks in a limited region of the stop band are observed in free standing PS coupled optical microcavities by Ghulinyan et al 51 Previously, we reported that the PL emission characteristics of PSi can be precisely controlled by ion irradiation. 52 We have demonstrated the use of focussed ion beam irradiation in conjunction with anodization to controllably alter the PL peak wavelength emission from adjacent micrometer sized areas of Psi. 53,54 This resulted in PL images containing several distinct colour emissions, from green to red on 4 Ω-cm p-type silicon, whereas on heavily doped P-type silicon (0.02Ω-cm), tuning of the PL intensity has been obtained by controlling the local resistivity with doses.…”

Section: Porous Silicon Based Optical Microcavitymentioning

confidence: 99%

Porous silicon-based Bragg reflectors and Fabry-Perot interference filters for photonic applications

et al. 2006

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Visible light emission from the porous silicon (PSi) formed by anodic etching of Si in HF solution has raised great interest in view of possible applications of Si based devices in optoelectronics. In particular, multilayers consisting of periodic repetition of two PSi layers whose refractive indices are different can be exploited to design interference filters for controlling the emission wavelength as well as for the spectral narrowing of the wide emission band of Psi. FabryPerot optical microcavities with an active layer of λ/2 or λ sandwiched between two Bragg reflectors, consisting of alternating layers of high and low refractive indices are fabricated on heavily doped p-type silicon. We have investigated the optical properties of these microstructures using reflectivity and photoluminescence measurements at various temperature.

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“…For example, pre‐patterning a crystalline silicon substrate with an HF‐resistant mask (e.g. a polymeric photoresist, silicon nitride, porous aluminum oxide), or with impurity dopants by ion implantation leads to spatially selective etching. In addition, a pattern can be introduced during the etch by illumination of the silicon wafer with a white light source or with interfering laser beams, which results in a two‐dimensional pattern by modifying the etch rate in the illuminated region(s).…”

Section: Introductionmentioning

confidence: 99%

Topological Control of Porous Silicon Photonic Crystals by Microcontact Printing

Ruminski

Barillaro

Secret

et al. 2013

Advanced Optical Materials

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Free‐standing, uniformly wrinkled multilayered photonic crystals are prepared in porous Si by conformal electrochemical etch of a highly doped p++ type Si wafer that is pre‐shaped with periodic grooves. The grooves are prepared by first microcontact printing a parallel line of oligomeric polydimethylsiloxane and then electrochemically etching the patterned wafer. The etch proceeds anisotropically, with the resist‐covered regions etching more slowly than the resist‐free regions. The grooved substrate is then etched using a sinusoidal current density waveform, generating a porosity‐modulated photonic crystal (rugate filter) that is conformal with the grooves. This porous multilayer is then removed, resulting in a freestanding nanostructure with a corrugated topological modulation in the x–y plane and a rugated porosity modulation in the z‐direction. In addition to the resonant photonic reflectance signature from the porosity‐modulated rugate filter (along the z direction), the structures display optical diffraction in transmission from the x–y plane due to the spatially modulated grooves. The silicon wafer that remains after removal of the porous multilayer still contains a rippled surface, allowing the process to be repeated without additional microcontact printing. Six generations of freestanding, three‐dimensional diffraction gratings are produced from a single wafer and only one initial patterning step.

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Proton beam writing of microstructures in silicon

Cited by 22 publications

References 32 publications

Fabrication of microstructures in III–V semiconductors by proton beam writing

Fabrication of microstructures in III–V semiconductors by proton beam writing

Porous silicon-based Bragg reflectors and Fabry-Perot interference filters for photonic applications

Topological Control of Porous Silicon Photonic Crystals by Microcontact Printing

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