Proton Bombardment Damage in Silicon

Abstract

An X-ray study is made of a single crystal of Si after irradiation by protons of energy N _ 6.5 MeV, the total dose being 1 to 2 x protons/cm2. An increase of the lattice parameter: d a _N + 3 x A is observed after bombardment. The atomic planes in the bombarded part of the Si crystal are tilted, making an angle of 1.7" with planes of the unbombarded part. An imperfection in the diamond-type structure is found as confirmed by diffraction from the (222) planes. Ein Si-Kristall wurde nach Bestrahlung mit Protonen rontgenographisch untersucht. Die Protonenenergie betrug etwa 6,5 MeV und ihre Gesamtdosis 1 bis 2.10" Protonen/cm2. Nach der Bestrahlung wurde eine Zunahme der Gitterkonstante von d a A beobachtet. Die Netzebenen in dem bestrahlten Teil des Si-Kristalls waren urn einen Winkel von etwa 1,7" gegen die Netzebenen der unbestrahlten Teils gedreht. Eine Storung der Diamantstruktur konnte durch das Vorhandensein der (222)-Interfrenz festgestellt werden.

X-ray Diffraction Investigations of Structure of Silicon Single Crystals after Irradiation by Heavy Ions

“…The investigations [1][2][3][4][5][6][7] showed that the stuctures of silicon crystals irradiated by heavy ions with a few MeV energies are characterized by the different states of lattice deformations.…”

Lattice Deformation Studies in Silicon Implanted with High-Energy Protons

“…This effect increases with the energy of the implanted ions and their dose and very often it causes strong bending of the sample. The crystal deformation and the stress level can be very effectively studied by means of X-ray diffraction methods especially those based on double-crystal spectrometers [1][2][3].…”