Proton-exchanged optical waveguides in LiTaO<sub>3</sub>: phase composition and stress

Kuneva, M.; Christova, K.; Tonchev, S.

doi:10.1088/1742-6596/398/1/012047

Cited by 3 publications

(6 citation statements)

References 16 publications

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“…Mode spectra were measured by the prism coupling method. The waveguide thickness and the maximal value of the refractive index change were determined after optical profile reconstruction [5,6]. The analysis of the phase content was performed in [5,6] and its results are shown also in table 1.…”

Section: Experimental -mentioning

confidence: 99%

“…The phase analysis performed earlier [5,6] based on both IR absorption spectroscopy and optical profile reconstruction of the studied samples allow making assumptions about the top sublayer's phase which should be the strongly protonated one of the sublayers forming the entire waveguide layer. Here, the analysis of the reflection spectra will help to attribute the bands to the definite phase and this way to allow phase recognition by the reflection of the definite sample.…”

Section: Experimental -mentioning

confidence: 99%

“…As a result of the PE, some lattice deformations appear causing mechanical stress (MS) in the waveguide layer as well. The phase analysis based on mode and IR absorption spectra was already performed and reported earlier [5,6] (a) E-mail: kuneva@issp.bas.bg (b) Present address.…”

mentioning

confidence: 99%

“…as well as an MS evaluation [6]. The novelty here is the surface phase recognition by using deconvoluted IR reflection spectra and the attempt to connect the MS with the phase content determined this way.…”

mentioning

confidence: 99%

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Phase composition and stress in LiTaO ₃ proton-exchanged optical waveguides

Kuneva

Christova

Tonchev

2013

EPL

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The phase composition of the top layer of Li1−xHxTaO3 waveguide layers produced at different modifications of the proton exchange (PE) technology has been analyzed based on their IR reflection spectra. These spectra contain new bands within the range , each phase having its own reflection spectrum. Since the top layer is actually the strongest proton-exchanged one of all sublayers building the waveguide layer, the recognition of the top sublayer's phase in many cases could be used to make conclusions about the phases building the rest of the entire PE layer. The intrinsic stress caused by crystal lattice deformation due to the PE was calculated by an optical integral method. An attempt to explain the level of stress is made based on the phase composition of the studied samples.

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Section: Experimental -mentioning

confidence: 99%

Section: Experimental -mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Phase composition and stress in LiTaO ₃ proton-exchanged optical waveguides

Kuneva

Christova

Tonchev

2013

EPL

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“…Intrinsic semiconductors consist of only one element, such as Si only or Ge only. In Si semiconductor crystals, 1 Si atom, which has 4 valence electrons, is bonded to 4 other Si atoms [10], [11]. In the intrinsic semiconductor crystal Si, the primitive cell is cuboid.…”

Section: Introductionmentioning

confidence: 99%

The Effect of Cerium Doping on LiTaO3 Thin Film on Band Gap Energy

Ismangil¹,

Subiyanto²,

Sudradjat³

et al. 2021

IJECS

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Lithium tantalite LiTaO3 was grown on a Si Type-P (100) substrate by chemical solution deposition and spin coating methods at a speed of 3000 rpm for 30 seconds with an annealing temperature of 800 ° C, 900 ° C. This study aims to determine the effect of temperature variations on the band gap energy. The results show that the energy band gap value of the thin film has a significant impact on the interpretation of annealing temperature. It can be seen that a high energy band gap peak occurs at an annealing temperature of 900 ° C and a time of 15 hours of the energy band gap of 1,49 eV. This shows the effect of temperature variations on the energy band gap to move from the valence band to the conduction band, which will produce current.

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