Proton implantation and rapid thermal annealing effects on GaAs/AlGaAs quantum well infrared photodetectors

Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12μm atmospheric window via rapid thermal annealing

“…8,9 There has been a recent report on the effect of intermixing in InGaAs/ GaAs QDIPs, where a 1.3 m shift from = 6.1 m ͑as grown͒ was observed, followed, however, by significant degradation in performance. 12,13 Typically for QWI, ion implantation is used in addition to RTA to produce noticeable shifts. For strained InGaAs QW systems, absorption peak shifts of 1.2 m from = 10.2 m ͑as grown͒ have been achieved, 11 and in GaAs/ AlGaAs QW systems, shifts of 1.8 m from ϳ 6.5 m ͑as grown͒ and 1.6 m from = 8.2 m ͑as grown͒ have been demonstrated.…”

Multi-frequency THz emission from asymmetric GaAs/AlGaAs quantum well patterned by intermixing

“…4. The blue-shift behavior for the inter-sublevel transition energy is different from the red-shift in the quantum well detector [19]. This different behavior is related to the electronic-state properties.…”

“…It is well known that quantum well intermixing (QWI) techniques have been developed to modify energy levels [15][16][17][18][19][20][21][22][23][24][25]. Intermixing can easily change the electronic confinement potential of the quantum well to allow postgrowth adjustment of the electron energy levels in the quantum well.…”

Photoluminescence and photo-modulated reflectance spectra of ion-implanted GaAs/AlGaAs coupled quantum wells

“…However, ion implantation enhances not only the diffusion length of the Al atoms across the GaAs/AlGaAs heterointerface, it introduces various defects in the system so that the relaxation energy of the carriers significantly increases with the dose of the ion implantation, from less than 1 meV in the as-grown material to a few meV in the postgrowth processed samples. 7 For example, the intermixing of the heterointerface in the GaAs/AlGaAs quantum well infrared photodetector increases the alloy scattering so that the mobility of photoexcited carriers becomes significantly reduced. 8 It is therefore of great importance that in the device application of the heterostructure material, detailed balance between energy-band-structure tailoring and carrier transport property modification is obtained by the quantum-well intermixing technique.…”