Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12μm atmospheric window via rapid thermal annealing

Aivaliotis, Pantelis; Zibik, E. A.; Wilson, L. R.; Cockburn, J. W.; Hopkinson, M.; Airey, R.

doi:10.1063/1.2794014

Cited by 18 publications

(12 citation statements)

References 27 publications

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“…It is believed that annealing increased material diffusion between the dot and the capping layer and, therefore, reduces the confinement of the quantum dots in devices. Despite these advances, the operating temperatures of DWELL devices remained fairly low, rarely operating significantly above LN 2 temperatures and even then barely above them [244–246]. Double well DWELLs, where one period of the DWELL absorbing incorporates a barrier layer, two well layers, and a dot layer, were also developed over this time period, led by the Krishna group.…”

Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

231

110

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The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come.

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Section: Quantum Dots-in-a-well Photodetectors (Dwell-ips)mentioning

confidence: 99%

Progress in Infrared Photodetectors Since 2000

Downs

Vandervelde

2013

Sensors

231

110

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“…For this reason different low bandgap materials, such as InAsSb supperlattices 8,9 or, more recently, InAsBi 10 have been investigated as promising alternatives for the MWIR range. QWIPs, and specially QDIPs, have been regarded as possible alternatives in the MWIR and LWIR ranges, for they are technologically mature and their detection wavelength can be engineered over these ranges, up to 12 μm [11][12][13] . However, they cannot, so far, compete in performance with their photodiode counterpart.…”

mentioning

confidence: 99%

Optically Triggered Infrared Photodetector

et al. 2014

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We demonstrate a new class of semiconductor device: the Optically Triggered Infrared Photodetector (OTIP). This photodetector is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. Our experimental device, fabricated using InAs/AlGaAs quantum-dot technology, demonstrates normal incidence infrared detection in the 2-6 μm range. The detection is optically triggered by a 590-nm light-emitting diode. Furthermore, the detection gain is achieved in our device without

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“…Fig. 5 shows recently published D£ values as a function of wavelength at 77-80 K. As can be seen, QDIPs [30,31,[42][43][44]47,53,57,66,103,106,[109][110][111][112][113][114][115][116][117][118][119][120][121][122][123][124] have D£ values comparable to those of QWIPs [13,92,102,[125][126][127][128][129]. This is very promising, as D£ values for QDIPs have increased by over two orders of magnitude over last 7-8 years, as seen in Fig.…”

Section: Responsivity and Detectivitymentioning

confidence: 53%

Review of current progress in quantum dot infrared photodetectors

Barve

Lee

Noh

et al. 2009

Laser & Photonics Reviews

124

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Quantum dot infrared photodetectors (QDIPs) have made significant progress after their early demonstration about a decade ago. The progress made by QDIP technology over the last few years is reviewed and compared with quantum well infrared photodetectors (QWIPs). It is shown that the performance of QDIPs has significantly improved using novel architectures such as dots-in-a-well designs, and large-format (1 K 1 K) focal plane arrays have been realized. However, even though there are significant reports of performance parameters better than QWIPs from single-pixel devices, QDIP-based focal plane arrays are still a factor of 3-5 worse in terms of noise equivalent temperature difference. The reasons for the performance gap and the key scientific and technological challenges that need to be addressed to achieve the full potential of QD-based technology are discussed.Three-dimensional rendition of quantum dots in a well structure.

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Tuning the photoresponse of quantum dot infrared photodetectors across the 8–12μm atmospheric window via rapid thermal annealing

Abstract: Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector J. Appl. Phys. 94, 5283 (2003); 10.1063/1.1609634Effect of the dot size distribution on quantum dot infrared photoresponse and temperature-dependent dark current

Cited by 18 publications

References 27 publications

Progress in Infrared Photodetectors Since 2000

Progress in Infrared Photodetectors Since 2000

Optically Triggered Infrared Photodetector

Review of current progress in quantum dot infrared photodetectors

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