Proton implanted singlemode holey vertical-cavity surface-emitting lasers

Abstract

Wedge-shaped holes have been fabricated in the top mirror of proton implant confined vertical-cavity surface-emitting lasers. The index confinement and selective loss introduced by these patterns improved the performance by both increasing the singlemode power and reducing the threshold current of the lasers. A maximum single fundamental mode power of 3.5 mW with a simultaneous reduction of lasing threshold compared to an unmodified laser was observed. Multimode operation was suppressed over the entire laser operating range.

High-Power Single-Mode Vertical-Cavity Surface-Emitting Lasers with Multi-Leaf Holey Structure

“…3 also show that the lasing mode of the device is well confined within the central laser-emitting area surrounded by the multi-leaf holey structure. Our multi-leaf holey structure, which is different from the previous studies 5,6) made with smaller triangular holes, can generate comparable effects for higher order mode suppression.…”

“…4) Also, single-mode VCSELs can be realized by using triangular holey structure, combined with oxide layer and proton implantation for current confinement. 5,6) In this letter, we report our results on the oxide-confined VCSELs with multi-leaf holey structure in the 850 nm range. Singletransverse-mode operation with very high output power of the holey VCSEL is demonstrated with side-mode suppression ratio (SMSR) of over 22 dB.…”

Single Mode Photonic Crystal Vertical Cavity Surface Emitting Lasers

“…The simplest approach is reducing the oxide [2] or implant [3] cavity diameter, but this comes at the expense of high current density and inferior laser reliability. Other approaches include a hybrid combination of oxide/implant apertures [4], surface relief etched structures [5], increasing the optical cavity length [6], etched holey patterns [7,8], and etched photonic crystal VCSELs [9][10][11][12][13][14].…”

Single-Mode Vertical-Cavity Surface-Emitting Lasers with a Deep-Etched Half-Ring-Shaped Holey Structure

“…6) Also, single-mode VCSELs can be realized by using triangular holey structure, combined with oxide layer and proton implantation for current confinement. 7,8) For single-mode VCSELs made with a shallow surface-relief etching, the lasing mode characteristics of the devices depend critically on the etching depth ($ tens nm) of the surface layers. [2][3][4] For the inverted surface-relief structure, the central single-mode laser emission region ($2:5 to 4.5 m in diameter) was shallowly etched to provide loss mechanism for the higher-order modes in the un-etched area.…”