Proton-induced transient effects in a metal-semiconductor-metal (MSM) photodetector for optical-based data transfer

Abstract

We present a study of proton transient effects in metalsemiconductor-metal (MSM) photodetectors, which demonstrates their inherent advantage for minimizing Single Event Effects (SEES) in proton environments. Upset mechanisms are characterized for 830 nm GaAs and 1300 nm InGaAs detectors. Only protons incident at grazing angles are likely to cause a bit errors by direct ionization, The MSM technology appears to be a more robust to single bit errors than thicker 1300 nm p-i-n diode structures which we have previously shown to be susceptible to errors from direct ionization events at all angles, and also at relatively high optical powers [l].For a given receiver, the relative contributions of direct ionization and nuclear reaction upset mechanisms at a specific data rate and optical power are determined by the geometry of the charge collection volume of the detector. We show that state-of-the-art p-i-n detectors can also display a reduced sensitivity to direct ionization by incident protons except at grazing angles.

Emerging optocoupler issues with energetic particle-induced transients and permanent radiation degradation

“…This was initially demonstrated in [6] and is supported by work presented on metal-semiconductor-metal (MSM) in this journal [15]. The SETS can be mitigated with circuit filtering, however the cost is reduced bandwidth.…”

Simulation of impulse response degradation from irradiation induced trapping and recombination regions in an InGaAs on InP photodetector

“…47 As-InP photodiodes ͑PDs͒ are a key component for long wavelength communication systems as they ͑a͒ increase the receiver dynamic range, ͑b͒ reduce loss and noise in externally modulated links, and ͑c͒ reduce complexity in subsequent signal processing due to the benefit of a larger signal. [2][3][4][5][6] Unlike terrestrial applications where faulty devices can be exchanged, operation in space requires high reliability over a mission's lifetime. [2][3][4][5][6] Unlike terrestrial applications where faulty devices can be exchanged, operation in space requires high reliability over a mission's lifetime.…”

“…The extreme of these effects is Space Charge Sign Inversion ͑SCSI͒, which occurs when the charge of defects accumulated in the junction compensates that of the immobile dopants, i.e., its sign is opposite and its concentration is greater. 3,18 DD can also influence DC and pulsed optical responsivity. 11 Note that radiation effects on materials properties can also be put to good use.…”

The Role of Ion Track Structure on High-Injection Carrier Dynamics in High-Speed Si and III-V Optoelectronic Sensors

“…For GHz optical communications based in a radiation environment, the length of an SET in relation to the signal modulation period means contamination can occur over more than one transfer cycle, thereby degrading the Bit Error Rate (BER) [7], [8]. Understanding the role of ambipolar diffusion and device structure on the SET response may be important when deciding on photodetectors appropriate for different applications in radiation fields.…”