Proton-induced upsets in 41-nm NAND floating gate cells

Gerardin, Simone; Bagatin,; Paccagnella, A.; Schwank,; Shaneyfelt,; Blackmore,

doi:10.1109/radecs.2011.6131302

Cited by 4 publications

(4 citation statements)

References 10 publications

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“…The corruption of FG bits due to high-energy protons was analyzed in 41-nm Single Level Cell (SLC) NAND Flash memories [34]. Proton-induced upsets at low doses are not negligible due to a combination of direct and indirect ionization effects.…”

Section: E Sensitivity Of Floating Gate Memories To Ionizing Radiatimentioning

confidence: 99%

High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies

Bolchini

Miele

Sandionigi

et al. 2012

2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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This paper reports the main contribution of a project devoted to the definition of techniques to design and evaluate fault tolerant systems implemented using the SoPC paradigm, suitable for mission- and safety-critical application environments. In particular, the effort of the five involved research units has been devoted to address some of the main issues related to the specific technological aspects introduced by these flexible platforms. The overall target of the research is the development of a design methodology for highly reliable systems realized on reconfigurable platforms based on a System-on-Programmable Chip (SoPC)

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Section: E Sensitivity Of Floating Gate Memories To Ionizing Radiatimentioning

confidence: 99%

High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies

Bolchini

Miele

Sandionigi

et al. 2012

2012 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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“…[15][16][17] In addition to the irradiation response induced by heavy ions, the proton irradiation response of NAND flash memories has also been studied by some researchers. [18][19][20] The Monte Carlo simulation method was used to simulate the process of proton irradiation devices. The LET value distribution of secondary particles generated by proton irradiation was calculated.…”

Section: Introductionmentioning

confidence: 99%

“…The LET value distribution of secondary particles generated by proton irradiation was calculated. 18,19) In addition, an exploratory experiment was conducted on the SEE sensitivity of low-energy proton-induced devices. Highscaling devices are more sensitive to low-energy protons than to high-energy protons.…”

Section: Introductionmentioning

confidence: 99%

Proton-induced single-event effect and influence of annealing on multiple feature size NAND flash memory

Peng

Chen

Luo

et al. 2019

Jpn. J. Appl. Phys.

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The proton-induced single-event effect sensitivity of multiple feature size NAND flash memories has been studied. The single-event upset cross section of memories was obtained as a function of feature size, and the cross section of device increases significantly with increasing integration. Monitoring of the proton-irradiated devices for up to 2 months indicates that the retention errors of devices due to reduced insulating properties of the tunnel oxide layer are more critical than error annealing due to the annealing of the trapped charge. During the dynamic test, a large number of semipermanent and regular data “stuck bit” errors were captured, which disappeared after a few days of annealing. Micro-dose effect, which occurred in the external control circuit of NAND flash by proton-produced secondary particles, is considered responsible to the “stuck bit” errors.

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“…Several papers have been published during the last decade on the effects of the recoils induced by high-energy protons on FG cells [14], [15]. Leaving aside the effects on the peripheral circuitry, the main conclusions are that the dependence of FG error cross section on proton energy may be significantly different depending on the studied devices.…”

Section: Introductionmentioning

confidence: 99%

Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

Bagatin

Gerardin

Paccagnella

et al. 2017

IEEE Trans. Nucl. Sci.

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Abstract-Floating gate cells in advanced NAND Flash memories, with single-level and multi-level cell architecture, were exposed to low-energy proton beams. The first experimental evidence of single event upsets by proton direct ionization in floating gate cells is reported. The dependence of the error rate versus proton energy is analyzed in a wide energy range. Proton direct ionization events are studied and energy loss in the overlayers is discussed. The threshold LET for floating gate errors in multi-level and single-level cell devices is modeled and technology scaling trends are analyzed, also discussing the impact of the particle track size.

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Proton-induced upsets in 41-nm NAND floating gate cells

Cited by 4 publications

References 10 publications

High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies

High-reliability fault tolerant digital systems in nanometric technologies: Characterization and design methodologies

Proton-induced single-event effect and influence of annealing on multiple feature size NAND flash memory

Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

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