Single Event Upsets Induced by Direct Ionization from Low-Energy Protons in Floating Gate Cells

Bagatin, M.; Gerardin, Simone; Paccagnella, A.; Visconti, A.; Virtanen, A.; Kettunen, H.; Costantino, Alessandra; Ferlet-Cavrois, V.; Zadeh, Ali

doi:10.1109/tns.2016.2637571

Cited by 17 publications

(10 citation statements)

References 27 publications

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“…We also performed a detailed microdosimetry Monte Carlo simulation of secondary particles from protons irradiating on silicon, and the results are shown to be very different from the previously reported work by Hiemstra and others with detail explanation. In particular, as compared to the simplified Monte Carlo results from Hiemstra [8], our results give much more low Z secondary particles which may not affect larger feature size but it will affect feature in nano-meter scale [45]. However, this study only focuses on a simplified hypothetical geometry.…”

Section: Discussionmentioning

confidence: 78%

Lineal Energy of Proton in Silicon by a Microdosimetry Simulation

et al. 2021

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Single event upset, or Single Event Effect (SEE) is increasingly important as semiconductor devices are entering into nano-meter scale. The Linear Energy Transfer (LET) concept is commonly used to estimate the rate of SEE. The SEE, however, should be related to energy deposition of each stochastic event, but not LET which is a non-stochastic quantity. Instead, microdosimetry, which uses a lineal calculation of energy lost per step for each specific track, should be used to replace LET to predict microelectronic failure from SEEs. Monte Carlo simulation is used for the demonstration, and there are several parameters needed to optimise for SEE simulation, such as the target size, physical models and scoring techniques. We also show the thickness of the sensitive volume, which also correspond to the size of a device, will change the spectra of lineal energy. With a more comprehensive Monte Carlo simulation performed in this work, we also show and explain the differences in our results and the reported results such as those from Hiemstra et al. which are commonly used in semiconductor industry for the prediction of SEE in devices.

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Section: Discussionmentioning

confidence: 78%

Lineal Energy of Proton in Silicon by a Microdosimetry Simulation

et al. 2021

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“…Also, [5] presents three different kinds of permanent effects under heavy-ion irradiation in the same SLC NAND Flash memory that is the target of this work; these failures are non-recoverable with a power cycle. The response of MLC and SLC NAND Flash memories to low-energy protons are exploited in [6], showing that MLC NAND Flash memories are sensitive to low-energy protons, but, on the contrary, the SLC NAND Flash cells in the same technology presented not to be sensitive.…”

Section: Introductionmentioning

confidence: 99%

Effects of Heavy Ion and Proton Irradiation on a SLC NAND Flash Memory

Luza

Besser

Gupta³

et al. 2019

2019 IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems (DFT)

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Space applications frequently use flash memories for mass storage data. However, the technology applied in the memory array and peripheral circuity are not inherently radiation tolerant. This work introduces the results of radiation test campaigns with heavy ions and protons on a SLC NAND Flash. Static tests showed different failures types. Single events upsets and raw error cross sections were presented, as well as an evaluation of the occurrences of the events. Characterization of effects on the embedded data registers was also performed.

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“…NAND Flash devices have been extensively tested using different sources of radiation such as in [2], [3]. Protoninduced effects and their sensitivity in SLC (Single-Level Cell) and MLC (Multiple-Level Cell) devices are approached in [4]. In [5] the authors compare the effects of electron irradiation with results from Co-60 Total Ionizing Dose (TID) measurements.…”

Section: Introductionmentioning

confidence: 99%