Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency

Caparroz, Luis F. V.; Martino, João Antônio; Simoen, Eddy; Claeys, Cor; Agopian, Paula Ghedini Der

doi:10.1109/sbmicro.2016.7731357

Cited by 2 publications

(3 citation statements)

References 8 publications

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“…Regarding the proton irradiation, it is noticeable that the SS of the devices is affected, as already suggested in previous works [5,17]. For wider n-FinFETs, a degradation of the SS after irradiation is verified, suggesting that the positive charges in the buried oxide induced by the proton irradiation promote an increase of the back interface current, because of the decrease in the threshold voltage at the back interface (V th2 ).…”

Section: Experimental Device Modelingsupporting

confidence: 67%

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Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Sousa¹,

Nogueira²,

Agopian³

et al. 2021

Semicond. Sci. Technol.

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In this work, the influence of proton-irradiation in the voltage gain of two-stage operational transconductance amplifier (OTA) designed with silicon-on-insulator (SOI) fin field effect transistors (FinFETs) is studied. The OTA simulations were performed using Verilog-A approach based on experimental data extracted from the SOI FinFET electrical characterization, before and after proton-irradiation. The OTA is designed with SOI FinFETs of fin widths (W fin) of 20 nm, 120 nm, and 870 nm, all in the same predefined inversion region (g m/I D = 8 V−1). All evaluated OTA circuits exposed to proton-irradiation presented a voltage gain increase (compared with pre-irradiation circuits), of 0.87 dB, 1.19 dB, and 6.16 dB for fin widths of 20 nm, 120 nm, and 870 nm, respectively. The results show that despite the typical radiation effect of degradation of the individual transistors (it being more severe for larger fin width SOI FinFET), these effects combined in OTA circuits result in an unexpected improvement in DC voltage gain, especially for wider fins. Focusing on the fin width impact on the OTA voltage gain, before and after proton-irradiation, it is much greater for narrow fin width SOI FinFET thanks to the better Early voltage.

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Section: Experimental Device Modelingsupporting

confidence: 67%

“…No bias was applied during the irradiation and all the devices were unpackaged. Other studies that used the same irradiated devices can be found in [5,15,17]. The measurements for this study were performed at room temperature, using the Keysight Agilent B1500A semiconductor device analyzer at University of Sao Paulo (LSI/USP).…”

Section: Device Characteristicsmentioning

confidence: 99%

Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Sousa¹,

Nogueira²,

Agopian³

et al. 2021

Semicond. Sci. Technol.

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show abstract

“…It is known that the SOI technology provides significant immunity to single-event phenomena when compared to bulk transistors, due to the thin active silicon region that provides a better electrostatic coupling and the existence of the buried oxide beneath the channel that isolates the transistor active area from the substrate. Still, the radiation effect have to be considered because the trapped charges in the buried oxide (BOX) degrade the transistor characteristics due to the higher Total Ionization Dose (TID) (5)(6)(7)(8)(9).…”

Section: Introductionmentioning

confidence: 99%

Proton-Irradiation Influence on Current Mirror Circuit Using Verilog-A Approach Based on Experimental SOI FinFET Characteristics

Sousa¹,

Agopian²,

Martino³

2020

ECS Trans.

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In this work, a simple methodology is proposed to simulate the current mirror circuit based on the triple-gate SOI FinFET experimental data, called lookup table in Verilog-A. It was analyzed the reliability of the model, comparing between experimental and simulated data, with has proven to be reliable. It was also evaluated the performance of the transistor and as well the circuit regarding the efficiency and the gain, for p- and n-types, based on three different fin widths, before and after proton-irradiation.

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Proton radiation influence on SOI FinFET trade-off between transistor efficiency and unit gain frequency

Cited by 2 publications

References 8 publications

Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Voltage gain improvement of the operational transconductance amplifier designed with silicon-on-insulator fin field effect transistor after being exposed to proton-irradiation

Proton-Irradiation Influence on Current Mirror Circuit Using Verilog-A Approach Based on Experimental SOI FinFET Characteristics

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