Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes

Zhang, Min; Qin, Fei; Chen, Si; Dai, Yanwei; Chen, Pei; An, Tong

doi:10.1007/s11664-022-09503-z

Cited by 11 publications

(3 citation statements)

References 65 publications

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“…In recent years, three-dimensional (3D) integrated circuit (IC) technology with the through-silicon via (TSV) has attracted significant attention because of its versatility, small size, and high performance. 3D IC is a technology that reduces the overall wire length and delay by vertically stacking multiple chips through high-density chip-to-chip interconnects [1][2][3][4][5][6][7] . TSV technology involves several processes, including etching holes in Si chips, depositing insulating/blocking/seeding layers, filling blind holes with Cu conductors, removing the backside Si and Cu overlay films via chemical-mechanical planarization (CMP) to expose Cu microcartridges, and ball bonding 8,9 .…”

Section: Introductionmentioning

confidence: 99%

“…Insufficient or excessive wafer polishing can lead to leaks and shorts, making the chips defective. Residual stress, interface delamination, and cracking occur when the annealing time or temperature is insufficient or excessive 6,16,17 . However, real-time nondestructive characterization methods for Cu protrusions and dishing are still limited.…”

Section: Introductionmentioning

confidence: 99%

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Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Song

Sun

Yang

et al. 2022

Preprint

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The Cu-filling process in through-silicon via (TSV-Cu) is a key technology for chip stacking and three-dimensional vertical packaging. During this process, defects resulting from chemical–mechanical planarization (CMP) and annealing severely affect the reliability of the chips. Traditional methods of defect characterization are destructive and cumbersome. In this study, a new defect inspection method was developed using Mueller matrix spectroscopic ellipsometry. TSV-Cu with a 3-µm-diameter and 8-µm-deep Cu-filling showed three typical types of defects: over-dishing (defect-OD), protrusion (defect-P), and defect-free defects. The process window for each defect was 13 nm. First, the three typical defects caused by CMP and annealing were investigated. With single-channel deep learning and a Mueller matrix element (MME), the TSV-Cu defect types could be distinguished with an accuracy rate of 99.94%. Next, seven effective MMEs were used as seven channels in the artificial neural network to quantify the height variation in the Cu-filling in the z-direction. The accuracy rate was 98.92% after training, and the recognition accuracy reached 1 nm. The proposed approach rapidly and nondestructively evaluates the annealing bonding and CMP processes, which can improve the reliability of high-density integration.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Song

Sun

Yang

et al. 2022

Preprint

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show abstract

“…In recent years, microsystem technology has received more and more attention (Fan et al , 2022; Zhang et al , 2022). Microsystems that combine micromachining technology and integrated circuit technology have the advantages of miniaturization, integration, high density and low cost (Maity et al , 2022).…”

Section: Introductionmentioning

confidence: 99%

Effects of ⁶⁰Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging

Zhang

Liu

Cao

et al. 2022

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Purpose Concerning the radiation effects on the three-dimensional (3D) packaging in space environment, this study aims to investigate the influence of the total dose effect on the transmission characteristics of high-frequency electrical signals using experimental and simulation methods. Design/methodology/approach This work carries out the irradiation test of the specimens and measures their S21 parameters before and after irradiation. A simulation model describing the total dose effect was built based on the experimental test results. And, the radiation hardening design is evaluated by the simulation method. Findings The experimental results demonstrate that the S21 curve of the interconnection decreases with the increase of the irradiation dose, indicating that the total dose effect leads to the decline of its signal transmission characteristics. According to the simulation results, decreasing the height of the through silicon via (TSV), increasing the radius of the TSV, reducing the length of Si and increasing the number of grounded through silicon via have positive effects on improving the radiation resistance of the interconnection structure. Originality/value This work investigates the effect of radiation on the transmission characteristics of interconnection structures for 3D packaging and proposes the hardening design methods. It is meaningful for improving the reliability of 3D packaging in space applications.

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Effect of temperature cycling on the leakage mechanism of TSV liner

Chen

Jian

et al. 2023

Microelectronics Reliability

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Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes

Cited by 11 publications

References 65 publications

Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Effects of ⁶⁰Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging

Effect of temperature cycling on the leakage mechanism of TSV liner

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Protrusion of Through-Silicon-Via (TSV) Copper with Double Annealing Processes

Cited by 11 publications

References 65 publications

Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Nondestructive monitoring of annealing and chemical–mechanical planarization behavior using ellipsometry and deep learning

Effects of 60Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging

Effect of temperature cycling on the leakage mechanism of TSV liner

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Effects of ⁶⁰Co γ ray radiation on the transmission characteristics of interconnection structures for 3D packaging