Proximity Effect Correction For Electron Beam Lithography:     Highly Accurate Correction Method

Kamikubo, Takashi; Abe, Takayuki; Oogi, Susumu; Anze, Hirohito; Shimizu, Masaharu; Itoh, Masamitsu; Nakasugi, Tetsuro; Takigawa, Tadahiro; Iijima, Takafumi; Hattori, Yoshiaki; Tojo, Toru

doi:10.1143/jjap.36.7546

Cited by 14 publications

(9 citation statements)

References 5 publications

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“…This is of major concern since the Toshiba PEC is actually a dose modulated correction. 3 Resist parameters were defined to replicate cross-sections of contact and line/space profiles and then tested against linearity data to verify good agreement to a variety of CD data. The linearity data utilizing the resist parameters defined by cross-sectional experimental data is shown in Figure 6.…”

Section: Basic Process Set-up and Experimental Results For Maskmentioning

confidence: 99%

E-beam lithography experimental results and simulation for the 45-nm node

et al. 2004

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E-Beam Lithography is still the driving technology for semiconductor manufacturing of critical levels at the 45nm node. Mask costs, yields and representation of the mask on wafer are important factors to consider. Mask-less E-beam lithography is being considered, but major manufacturing is still done by scanner technology. Therefore the same emphasis on modeling applied in the 1990's on the wafer is now being applied to mask technologies to drive down costs, improve yields and to develop viable mask to wafer transfer patterns.Yield is ultimately connected to process latitude, which is limited by a variety of electron-material interaction issues. As in the optical world, the question is how to maximize the process window considering all the systematic and statistical error sources. Simulation can be used to find out the magnitude of yield limiting effects, and to evaluate the contributing error sources such as PEC file contributions. Film stacks are now becoming an important contributor to statistical error due to technologies such as tri-tone attenuated masks that place a thin layer of chrome over MoSi.In this paper we will compare the SELID E-beam simulation to cross-sections of line-space and contact patterns. Demonstrations of simulation to real data and the use of simulation to further evaluate process window to enhance the learning mode during development cycles will be presented.

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Section: Basic Process Set-up and Experimental Results For Maskmentioning

confidence: 99%

E-beam lithography experimental results and simulation for the 45-nm node

et al. 2004

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“…There are even no patterns at all in the case of positive resist. Of course there are several ways to improve the dose modulation method, like by increasing the number of available doses to get finer dose allocation or by increasing the number of Gaussian functions in the PSF to get a model that better matches the scattering of electrons 10 , or by using more accurate modelling and algorithms for dose allocation 11,12,13 . Another solution is to implement geometrical correction 5,14 .…”

Section: Current Correction Methodsmentioning

confidence: 99%

New writing strategy in electron beam direct write lithography to improve critical dense lines patterning for sub-45nm nodes

Martin

Manakli

Icard

et al. 2009

25th European Mask and Lithography Conference

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Electron beam direct write lithography is known for its high resolution capabilities, which enables studies ahead of the technology in production. That is why this technique is used for many years in laboratories for R&D. Recently it was shown that electron beam lithography can be integrated within the flows of the microelectronics industry for prototyping applications, low volume production and to support optical lithography for ASIC manufacturing. Moreover recent lithography workshops highlighted that the multi beam solution is identified as one potential technique for next generation lithography techniques to meet the requirements of sub-32nm technological nodes. The present proximity correction methods for electron beam lithography are based on the standard dose modulation principle. However these methods cannot properly ensure a sufficient control of the patterning of the most critical designs. To push the resolution capability of electron beam lithography, a new correction method is proposed. It consists in a multiple pass exposure strategy. For example instead of patterning a line in one pass (standard exposure), the pattern is split in several basic blocks with potential overlaps exposed in several passes and with an adapted dose. Compared to standard exposure, this solution provides an improved process window and a better control of the critical dimensions. We could achieve energy latitude of 22.2% and we improved the line edge roughness by 27% on 45nm dense lines (line width equal to space) with this method.

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“…If we define the PEC correction error as η e , the absorbed dose in resist can be described as follows [3][4] …”

Section: Pec Latitudementioning

confidence: 99%

A study of post-exposure baking effect for CAR process in photomask fabrication

Park¹,

Seo²,

Jeong³

et al. 2003

SPIE Proceedings

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As the requirement of specification on photomask continues to be tightening with advanced logic and memory devices, the combined process of chemically amplified resist (CAR) and high acceleration voltage e-beam writing tool is widely used to meet the resolution and throughput for advance photomask fabrication. It is well known that the post exposure baking (PEB) condition makes serious effect on the characteristic of CAR due to its de-protection reaction with thermal acid catalyzation. In this paper, we present the PEB temperature effect on pattern resolution such as line edge roughness (LER) and proximity effect correction (PEC) latitude that is practical limitation in the combined process of 50 kV writing tool and CAR resist. Our results show that LER and PEC latitude are strongly dependent on PEB temperature due to resist contrast variation. At higher PEB temperature, increasing the contrast value can reduce the LER and it can increase the optimum PEC latitude.

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Proximity Effect Correction For Electron Beam Lithography: Highly Accurate Correction Method

Cited by 14 publications

References 5 publications

E-beam lithography experimental results and simulation for the 45-nm node

E-beam lithography experimental results and simulation for the 45-nm node

New writing strategy in electron beam direct write lithography to improve critical dense lines patterning for sub-45nm nodes

A study of post-exposure baking effect for CAR process in photomask fabrication

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