Pseudo-ballistic transport in 3D topological insulator quantum wires

Dufouleur, Joseph; Veyrat, Louis; Xypakis, Emmanouil; Bardarson, Jens H.; Nowka, Christian; Hampel, Silke; Eichler, Barbara; Schmidt, Oliver G.; Büchner, Bernd; Giraud, Romain

doi:10.48550/arxiv.1504.08030

Cited by 3 publications

(4 citation statements)

References 39 publications

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“…Our finding of AB oscillations in the diffusive regime confirmed and extended a recent experiment which found an AB signal in quite long wires as long as the perimeter P < l is less than than the scattering length l. 23 We found that if P < l the AB signal depends periodically on E F , and if P > l its amplitude is random. Our observation of AAS oscillations in the ballistic regime verifies theoretical work showing that they can occur even in ballistic samples as a consequence of constructive quantum interference between time-reversed circuits around the wire.…”

Section: Magnetic Phase Effects In Wiressupporting

confidence: 90%

Electronic Conduction in Disordered Materials: Wave-like or Particle-like?

Sacksteder

2020

Preprint

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Section: Magnetic Phase Effects In Wiressupporting

confidence: 90%

Electronic Conduction in Disordered Materials: Wave-like or Particle-like?

Sacksteder

2020

Preprint

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“…Our finding of AB oscillations in the diffusive regime confirm and extend a recent experiment which found an AB signal in quite long wires as long as the perimeter P < l is less than than the scattering length l. 18 We find that if P < l the AB signal depends periodically on E F , and if P > l its amplitude is random. Our observation of AAS oscillations verifies theoretical work showing that they occur in the ballistic regime as a consequence of constructive quantum interference between time-reversed circuits around the wire.…”

supporting

confidence: 90%

“…One may distinguish between Aharonov-Bohm oscillations with period Φ 0 and Altshuler-Aronov-Spivak (AAS) oscillations with period Φ 0 /2. [5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] In addition Universal Conductance Fluctuations (UCFs) are observed -a noise-like component of G(Φ) which depends sensitively on the Fermi level and on disorder. 5,9,[24][25][26][27][28][29][30] TIs also host a Perfectly Conducting Channel (PCC)a conductance quantum which is remarkable for its persistence in very long TI wires, its topological protection, and its status as a 3-D analogue of the quantum Hall effect.…”

mentioning

confidence: 99%

Quantum interference effects in topological nanowires in a longitudinal magnetic field

Sacksteder

2016

Phys. Rev. B

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We study the magnetoconductance of topological insulator nanowires in a longitudinal magnetic field, including Aharonov-Bohm, Altshuler-Aronov-Spivak, perfectly conducting channel, and universal conductance fluctuation effects. Our focus is on predicting experimental behavior in single wires in the quantum limit where temperature is reduced to zero. We show that changing the Fermi energy EF can tune a wire from from ballistic to diffusive conduction and to localization. In both ballistic and diffusive single wires we find both Aharonov-Bohm and Altshuler-Aronov-Spivak oscillations with similar strengths, accompanied by quite strong universal conductance fluctuations (UCFs), all with amplitudes between 0.3 G0 and 1 G0. This contrasts strongly with the average behavior of many wires, which shows Aharonov-Bohm oscillations in the ballistic regime and AltshulerAronov-Spivak oscillations in the diffusive regime, with both oscillations substantially larger than the conductance fluctuations. In single wires the ballistic and diffusive regimes can be distinguished by varying EF and studying the sign of the AB signal, which depends periodically on EF in ballistic wires and randomly on EF in diffusive wires. We also show that in long wires the perfectly conducting channel is visible at a wide range of energies within the bulk gap. We present typical conductance profiles at several wire lengths, showing that conductance fluctuations can dominate the average signal. Similar behavior will be found in carbon nanotubes. Strong topological insulators (TIs) possess a band gap that can be used to eliminate electrical conduction through their interior, but unlike standard insulators they robustly host conducting surface states which completely wrap all of the TI sample's surfaces.1,2 This unique circumstance allows realization of the celebrated Aharonov-Bohm effect, where electrons are sensitive to the total magnetic flux through a specific loop.3,4 If a TI wire has strictly constant cross-section along the wire's length, and the surface state has strictly zero penetration into the interior, then the wire's conductance G will be a strictly periodic function of the magnetic flux Φ through the wire's cross-section, i.e. G(Φ) = G(Φ + Φ 0 ), where Φ 0 = h/e is the magnetic flux quantum. This periodic dependence on the total magnetic flux threading the electron's path, and not on any local details of the path, is the hallmark of the Aharonov-Bohm (AB) effect.A long string of experiments has realized the AB effect in TI wires, and has observed a zoo of periodic conductance features. One may distinguish between AharonovBohm oscillations with period Φ 0 and Altshuler-AronovSpivak (AAS) oscillations with period Φ 0 /2.5-23 In addition Universal Conductance Fluctuations (UCFs) are observed -a noise-like component of G(Φ) which depends sensitively on the Fermi level and on disorder. 5,9,24-30TIs also host a Perfectly Conducting Channel (PCC) -a conductance quantum which is remarkable for its persistence in very long TI wires, its topological...

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“…Studying the TSS then requires to identify the their own contribution to charge transport. In Bi 2 Se 3 nanostructures, this was proved possible by studying quantum transport: Aharonov-Bohm effect 7,8 , Conductance Fluctuations 9 , and Shubnikov-de-Haas oscillations (SdHO) 2,[10][11][12][13][14][15][16][17][18][19] . So far, the analysis of SdHO in Bi 2 Se 3 remains unclear.…”

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confidence: 99%

Band Bending Inversion in Bi₂Se₃ Nanostructures

et al. 2015

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Shubnikov-de Haas oscillations were studied under high magnetic field in Bi2Se3 nanostructures grown by chemical vapor transport, for different bulk carrier densities ranging from 3 × 10(19) cm(-3) to 6 × 10(17) cm(-3). The contribution of topological surface states to electrical transport can be identified and separated from bulk carriers and massive two-dimensional electron gas. Band bending is investigated, and a crossover from upward to downward band bending is found at low bulk density as a result of a competition between bulk and interface doping. These results highlight the need to control electrical doping both in the bulk and at interfaces in order to study only topological surface states.

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Pseudo-ballistic transport in 3D topological insulator quantum wires

Cited by 3 publications

References 39 publications

Electronic Conduction in Disordered Materials: Wave-like or Particle-like?

Electronic Conduction in Disordered Materials: Wave-like or Particle-like?

Quantum interference effects in topological nanowires in a longitudinal magnetic field

Band Bending Inversion in Bi₂Se₃ Nanostructures

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Pseudo-ballistic transport in 3D topological insulator quantum wires

Cited by 3 publications

References 39 publications

Electronic Conduction in Disordered Materials: Wave-like or Particle-like?

Electronic Conduction in Disordered Materials: Wave-like or Particle-like?

Quantum interference effects in topological nanowires in a longitudinal magnetic field

Band Bending Inversion in Bi2Se3 Nanostructures

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Product

Resources

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Band Bending Inversion in Bi₂Se₃ Nanostructures