2019
DOI: 10.1016/j.matchemphys.2019.121820
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Pseudo-capacitance behaviour of reactively sputtered vanadium nitride electrodes deposited at different working pressures: The critical role of surface chemistry

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Cited by 12 publications
(5 citation statements)
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“…Previous literature have unveiled the pseudocapacitive charge storage mechanism of VN in a KOH electrolyte [ 14 , 15 , 16 ] but the pseudocapacitive charge storage mechanism of VN in the LiCl electrolyte attracts less focus. Ge’s group explored the pseudocapacitive charge storage of VN in LiCl electrolytes and reported the poor pseudocapacitance charge of VN in LiCl compared to KOH electrolytes.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Previous literature have unveiled the pseudocapacitive charge storage mechanism of VN in a KOH electrolyte [ 14 , 15 , 16 ] but the pseudocapacitive charge storage mechanism of VN in the LiCl electrolyte attracts less focus. Ge’s group explored the pseudocapacitive charge storage of VN in LiCl electrolytes and reported the poor pseudocapacitance charge of VN in LiCl compared to KOH electrolytes.…”
Section: Resultsmentioning
confidence: 99%
“…This is due to its large theoretical capacitance [ 6 , 7 ], suitable working negative potential window [ 8 , 9 , 10 ], excellent electrical conductivity [ 10 ] as well as pseudocapacitive properties [ 11 ]. Considering the electrochemical instability of VN in aqueous solution [ 12 , 13 ], the pseudocapacitance charge storage of VN that varies in different aqueous electrolytes (such as KOH and LiCl) also remains a bottleneck [ 14 , 15 , 16 ]. Recently, the storage mechanism of VN in KOH electrolyte has attracted impressive attention, while the pseudocapacitive function of VN in LiCl electrolyte is still at the infant phase.…”
Section: Introductionmentioning
confidence: 99%
“…The peak at 10.6°corresponding to the (002) plane of GO has been shifted to 24.9°after reduction by NaBH 4 , indicating the layered structure of RGO. 46 For VN, the peaks located at 37.6, 43.7, 63.6, and 76.3°correspond to the characteristic planes of (111), ( 200), (220), and (311), 47,48 matching with the ICSD database (01-078-1315) of Fm3m space group. The sample is impurity free of having a face-centered cubic (FCC) structure with lattice parameters a = b = c = 4.1382 Å and a crystallite size of 6.39 nm, derived from Debye−Scherrer equation.…”
Section: Resultsmentioning
confidence: 80%
“…Interestingly, as sputtered VN films [10,20] exhibit also a very high capacitance value in 1M KOH, we choose another attractive solution consisting in the design of a VN / hRuO 2 Asymmetric-MSC operating in KOH aqueous electrolyte. Many studies on nanostructured VN particles [27,[37][38][39][40] or sputtered VN films [10,19,20] have demonstrated that it is possible to test this pseudocapacitive material either between -1.2 to 0 V vs Hg/HgO or between -1 to -0.4 V vs Hg/HgO in 1M KOH. Nevertheless, from a cycling stability point of view, the electrochemical potential has to be restricted to a potential window between -1 and -0.4 V vs Hg/HgO in order to maximize the capacitance retention of the VN material.…”
Section: Resultsmentioning
confidence: 99%