1994
DOI: 10.1016/0921-5093(94)90723-4
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Pseudo-gaps in crystalline and quasicrystalline alloys

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Cited by 14 publications
(3 citation statements)
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“…Does the self-similarity of the structure require a new approach, different from the band-structure approach in crystals or from localization in disordered solids? Band structure calculations performed for approximant phases (Fujiwara 1989, Fujiwara and Yokokawa 1991, Hafner and Krajci 1992, 1993 are in line with the existence of the pseudo-gap observed experimentally at the Fermi level (E F ) (Belin and Traverse 1991, Belin et al 1992, 1994a, b, Belin-Ferré et al 1996. Current interpretations invoke a Hume-Rothery mechanism (HR), optimum in the case of quasicrystals because of the high multiplicity of the Bragg planes resulting from icosahedral symmetry (Friedel and Dénoyer 1987).…”
Section: Introductionsupporting
confidence: 76%
See 1 more Smart Citation
“…Does the self-similarity of the structure require a new approach, different from the band-structure approach in crystals or from localization in disordered solids? Band structure calculations performed for approximant phases (Fujiwara 1989, Fujiwara and Yokokawa 1991, Hafner and Krajci 1992, 1993 are in line with the existence of the pseudo-gap observed experimentally at the Fermi level (E F ) (Belin and Traverse 1991, Belin et al 1992, 1994a, b, Belin-Ferré et al 1996. Current interpretations invoke a Hume-Rothery mechanism (HR), optimum in the case of quasicrystals because of the high multiplicity of the Bragg planes resulting from icosahedral symmetry (Friedel and Dénoyer 1987).…”
Section: Introductionsupporting
confidence: 76%
“…Indeed, it has been shown (Friedel 1992, Trambly de Laissardière et al 1995 that the presence of TM d states of energies close to the gap, coupled to the sp states, results in an increase of the magnitude of the potential acting on the Fermi electrons and consequently an increase of the width of the resulting pseudo-gap. Previous experiments on Al-TM alloys have revealed indeed the strong Al p-TM d hybridization at E F , the result of which is to repel the electronic states on both sides of the Fermi level, giving rise to an enhanced pseudo-gap (Belin et al 1992, 1994a. The p-d hybridization is even responsible for the opening of an almost true gap in Al 2 Ru and Ga 2 Ru semiconductors (Nguyen Manh et al 1992, Fournée et al 1997.…”
Section: Resultsmentioning
confidence: 91%
“…In contrast to these marked differences, as outlined above, photoemission or x-ray emission spectroscopy (in general of about 0.3-0.5 eV resolution) did not reveal significant differences among the three species in their electronic DOS near E F , which were characterized by wide pseudogaps of about 1 eV [16][17][18]22].…”
Section: Sample Preparation and Characterizationmentioning
confidence: 99%