Pseudomagnetic fields in a locally strained graphene drumhead

Zhu, Songming; Huang, Yinjun; Klimov, Nikolai N.; Newell, David B.; Zhitenev, Nikolai B.; Stroscio, Joseph A.; Solares, Santiago D.; Li, Teng

doi:10.1103/physrevb.90.075426

Cited by 51 publications

(61 citation statements)

References 25 publications

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“…[16][17][18] In this device architecture, local strain was also induced or measured taking advantage of scanning probe techniques. 19,20 Differently, uniform biaxial strain configurations could be induced by taking advantage of piezoelectric effects in the substrate 21 and by using pressure transmitting media. 22 Concerning uniaxial strain, various studies have demonstrated the possibility to anisotropically deform graphene deposited on nonflat substrates, 23 on polydimethylsiloxane (PDMS) 24 or on similar stretchable substrates.…”

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confidence: 99%

Anisotropic straining of graphene using micropatterned SiN membranes

et al. 2016

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We use micro-Raman spectroscopy to study strain profiles in graphene monolayers suspended over SiN membranes micropatterned with holes of non-circular geometry. We show that a uniform differential pressure load ∆P over elliptical regions of free-standing graphene yields measurable deviations from hydrostatic strain conventionally observed in radially-symmetric microbubbles. The top hydrostatic strain ε we observe is estimated to be ≈ 0.7% for ∆P = 1 bar in graphene clamped to elliptical SiN holes with axis 40 and 20 µm. In the same configuration, we report a G± splitting of 10 cm −1 which is in good agreement with the calculated anisotropy ∆ε ≈ 0.6% for our device geometry. Our results are consistent with the most recent reports on the Grüneisen parameters. Perspectives for the achievement of arbitrary strain configurations by designing suitable SiN holes and boundary clamping conditions are discussed.

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confidence: 99%

Anisotropic straining of graphene using micropatterned SiN membranes

et al. 2016

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“…Based on Fermi's golden rule, the phononinduced p-spin transition rate in GNRs is given by (19) where T 1 is the p-spin lifetime, s l and s ζ are the longitudinal and transverse acoustic phonon velocities, and V = A r t is the volume. The matrix element M(kα) = ψ i |u kα ph (r)|ψ f with the emission of one phonon kα has been calculated perturbatively [9].…”

Section: Resultsmentioning

confidence: 99%

“…Strain fields, dislocations, and defects can also be utilized to control the band structures of graphene [16,17]. The influence of such effects (ripple, strain fields, dislocations, defects) on the band structure of graphene can be studied by coupling a strain tensor originating from electromechanical effects through a pseudopotential [18,19]. This pseudopotential induces large pseudomagnetic fields (300 to 1000 T) [11,20].…”

Section: Introductionmentioning

confidence: 99%

Pseudospin lifetime in relaxed-shape armchair graphene nanoribbons due to in-plane phonon modes

2016

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We study the influence of ripple waves on the band structures of strained armchair graphene nanoribbons. We argue that the Zeeman pseudospin (p-spin) splitting energy induced by ripple waves might not be neglected for smaller widths of armchair graphene nanoribbons (GNRs). We show that the p-spin splitting energy breaks the symmetry of degeneracy due to the ripple-induced Zeeman effect in GNRs, originating from electromechanical coupling. We estimate the p-spin lifetime in strained armchair GNRs caused by in-plane phonon modes for possible applications in straintronics and quantum information processing. By considering higher order terms in the strain tensor expansion, we also demonstrate that highly asymmetric band structures of GNRs induce asymmetric phonon-mediated p-spin relaxation. Such asymmetric p-spin relaxation is not possible for unstrained armchair and zigzag GNRs. In particular, we report that the p-spin transition rate decreases like B 5 0 (as a function of p-magnetic fields), L −9 (as a function of GNR width) and τ −1e , where τ e is the externally applied tensile edge stress.

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“…Introducing strain in graphene by wrinkling [20][21][22], folding [23][24][25] and functionalization [26][27][28][29][30][31] in a programmable fashion have received enormous attention largely due to the need to actively control the electronic and structural properties of graphene [32][33][34][35][36][37][38]. Nevertheless few efforts have been made to explore the effect of straining graphene on directional transport of molecular mass.…”

Section: Introductionmentioning

confidence: 99%