2013
DOI: 10.1116/1.4828357
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Pseudomorphic growth of InAs on misoriented GaAs for extending quantum cascade laser wavelength

Abstract: Articles you may be interested inMolecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure Growth by molecular beam epitaxy of self-assembled InAs quantum dots on InAlAs and InGaAs lattice-matched to InP

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Cited by 5 publications
(9 citation statements)
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“…Furthermore, frequency conversion is possible with InGaAs/AlGaAs grown on GaAs (111) due to the large ~7 % lattice mismatch of InAs with GaAs 3 , which induces compressive strain and enhances the internal electric field in the system. Conversely, instead of the two dimensional structures needed for sharp transitions between quantum wells and cladding regions, InAs on GaAs (100) causes three dimensional or defect rich structures 3 .…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, frequency conversion is possible with InGaAs/AlGaAs grown on GaAs (111) due to the large ~7 % lattice mismatch of InAs with GaAs 3 , which induces compressive strain and enhances the internal electric field in the system. Conversely, instead of the two dimensional structures needed for sharp transitions between quantum wells and cladding regions, InAs on GaAs (100) causes three dimensional or defect rich structures 3 .…”
Section: Introductionmentioning
confidence: 99%
“…Current iterations of this algorithm rank candidates based on the following objective criteria: 3-5 µm emission and E 3 confinement, Equation (2); LO phonon resonance between E 2 and E 1 and alignment of E 1 and injector well, Equation (3); injector energy levels alignment/coupling, Equation (4); oscillator strength of the E 32 transition and a population inversion/gain metric, Equation (5).…”
Section: Fitness Evaluation and Candidate Selectionmentioning
confidence: 99%
“…While these devices can be grown on the traditional (100) surface, indium incorporation is limited to only a few percent due to strain-induced three-dimensional growth modes [4]. However, pseudomorphic growth of (Ga)InAs on GaAs (111)B is possible [4,5], opening up a new class of devices. These devices benefit from strain-induced piezoelectric effect: reducing threshold voltage, extended wavelength tunability, and enhanced non-linear susceptibility [3,5].…”
Section: Introductionmentioning
confidence: 99%
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