Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

Abstract

Energy-saving photodetectors are the key components in future photonic systems and particularly, self-powered photoelectrochemical-type photodetectors (PEC-PDs) which depart completely from the classical solid-state junction device, have lately intrigued intensive interest to meet next-generation power-independent and environment-sensitive photodetection. Herein, we construct, for the first time, solar-blind PEC PDs based on self-assembled AlGaN nanostructures on silicon. Importantly, with the proper surface platinum (Pt) decoration, a significant boost of photon responsivity by more than an order of magnitude was achieved in the newly built AlGaN:Pt nanoarchitectures, demonstrating strikingly high responsivity of 45 mA/W and record fast response/recovery time of 47/20 ms without external power source. Such high solar-blind photodetection originates from the unparalleled material quality, fast interfacial kinetics, as well as high carrier separation efficiency which suggests that embracement of defectfree wide-bandgap semiconductor nanostructures with appropriate surface decoration offers an unprecedented opportunity for designing future energy-efficient and large-scale optoelectronic systems on silicon platform.

Ultrawide-bandgap (6.14 eV) (AlGa)2O3/Ga2O3 heterostructure designed by lattice matching strategy for highly sensitive vacuum ultraviolet photodetection

“…In recent years, the mainly used materials for preparing VUV detectors are those naturally ultrawide-bandgap semiconductor materials such as AlN [12][13][14], AlGaN [15][16][17] and BN [18][19][20][21][22]. Gallium oxide (Ga 2 O 3 ) is also considered to be a candidate for VUV detection, by adding aluminum component to obtain (AlGa) 2 O 3 ternary sesquioxides with a freely-adjustable bandgap (4.9-8.8 eV).…”

Coherent-interface-induced strain in large lattice-mismatched materials: A new approach for modeling Raman shift

“…Research in wide-bandgap III-nitride semiconductors continues to progress rapidly, especially for the materials with bandgap exceeding that of gallium nitride (3.4 eV). Specifically, III-nitride based heterostructures provide new opportunities for a wide range of research and device applications, such as piezotronics and piezophototronics [1], self-powered photoelectrochemical-type photodetectors [2], room-temperature quantum emitters [3], single photon emitters [4][5][6], resonant tunneling diodes [7], highelectron-mobility transistors [8,9], efficient photoelectrocatalysts for solar water splitting [10], multi-wavelength light-emitting diodes (LEDs) [11,12], and deep ultraviolet (DUV)-LEDs [13][14][15][16][17]. AlGaN-based DUV-LEDs represent a sustainable alternative to replace the environmentally harmful conventional mercury lamps [18] and thus, are becoming crucial for many applications such as water purification and/or inactivation of microorganisms, including bacteria, fungi, and viruses [19,20].…”

GaN MSM UV Detectors With Different Electrode Materials

“…MSM geometry includes back-to-back metal semiconductor (MS) contacts where the same metal electrodes are defined as symmetrical MSM and different metal electrodes are defined as asymmetrical MSM device. S. Chang [13][14][15]. At the same time, H. Sun et al also reported a GaN/AlGaN HEMT with a peak photoresponsivity of 6×10 7 A/W [16].…”