PtSe ₂ grown directly on polymer foil for use as a robust piezoresistive sensor

Abstract

Robust strain gauges are fabricated by growing PtSe 2 layers directly on top of flexible polyimide foils.These PtSe 2 layers are grown by low-temperature, thermally-assisted conversion of predeposited Pt layers. Under applied flexure the PtSe 2 layers show a decrease in electrical resistance signifying a negative gauge factor. The influence of the growth temperature and film thickness on the electromechanical properties of the PtSe 2 layers is investigated. The best-performing strain gauges fabricated have a superior gauge factor to that of commercial metal-based strain gauges. Notably, the strain gauges offer good cyclability and are very robust, surviving repeated peel tests and immersion in water. Furthermore, preliminary results indicate that the stain gauges also show potential for high-frequency operation. This host of advantageous properties, combined with the possibility of further optimization and channel patterning, indicate that PtSe 2 grown directly on polyimide holds great promise for future applications.

Electronic and structural characterisation of polycrystalline platinum disulfide thin films

“…Overall, the surface morphology is similar to that of TAC-grown PtSe 2 . 50,51 It can be seen from Fig. 2(c) (area depicted in Fig.…”

“…27,28 The beauty of this material is that the bandgap can be tuned by controlling the thickness of the PtS 2 lm. Additionally, low-temperature synthesis of the PtS 2 allows growth on diverse substrates, such as glass and polyimide, 51,57 and thus broadens the potential application area. Our results establish that STM and STS are powerful techniques that can be applied to the characterisation of TAC-grown PtS 2 .…”

Nanoelectromechanical Sensors Based on Suspended 2D Materials

“…Wafer-scale transfer of graphene has been demonstrated and can in principle be integrated as a back-end-of-the-line process [ 139 – 143 ]. Direct growth of 2D materials in the back-end-of-the-line ( Figure 2(b) ) is only permitted if the growth temperature is below 450°C, which is for example possible for PtSe 2 with a growth temperature of 400°C or less [ 119 , 144 ]. To realize CMOS integration, many challenges still need to be addressed.…”

Two-Dimensional Platinum Diselenide: Synthesis, Emerging Applications, and Future Challenges

“…Besides the conventional Si [33,115,116], Si/SiO 2 [32,33,55,94,112,114,[117][118][119][120][121][122][123][124], and Sapphire substrate [81,125,126], 2D PtSe 2 film has been successfully grown on fused quartz [31,84,125], fluorine-doped tin oxide (FTO) [127,128], gallium nitride (GaN) [129], and polyimide [114]. Figure 8c shows the PtSe 2 on the surface of flexible polyimide [41,114]. As shown in Fig.…”

“…For examples, PtSe 2 exhibits a strong layer-dependent band structure. Bulk PtSe 2 exhibits semimetallic character, while monolayer and fewlayer PtSe 2 are semiconductors [25,[41][42][43]. Moreover, PtSe 2 exhibits anisotropic carrier mobility along different directions.…”