Publisher's Note: Modeling and analysis of the three-dimensional current density in sandwich-type single-carrier devices of disordered organic semiconductors [Phys. Rev. B<b>79</b>, 085203 (2009)]

Holst, van der Jjm Jeroen; Uijttewaal, MA; Ramachandhran, B.; Coehoorn, R.; Bobbert, PA Peter; Wijs, de Ga; Groot, de Ra

doi:10.1103/physrevb.79.209901

Cited by 41 publications

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“…In these 3D device studies, 15 the current density was found to be highly inhomogeneous, in agreement with other studies. [16][17][18][19] This inhomogeneous structure involves narrow current filaments that carry almost all the current, characteristic of the percolative nature of charge transport in disordered materials.…”

Section: Introductionsupporting

confidence: 79%

“…III we present the current-voltage characteristics of devices with uncorrelated as well as correlated disorder, corresponding to the EGDM and ECDM, respectively. For the case of the EGDM, we compare our results with our previous work based on the master-equation approach, 15 while for both the EGDM and the ECDM we compare our results with those of 1D drift-diffusion modeling. In Sec.…”

Section: Introductionmentioning

confidence: 55%

“…For R c = 0, Coulomb interactions of a charge with other charges and their image charges are only taken into account in a layer-averaged way while the interaction of a charge with its own image charges is taken into account explicitly, as in our previous master-equation calculations. 15 With increasing R c , Coulomb interactions are taken into account in an increasingly exact way, with full exactness for R c = ∞. For a well-chosen finite value of R c we can obtain a good compromise between accuracy and simulation speed.…”

Section: A Monte Carlo Methodsmentioning

confidence: 99%

“…As in Ref. 15 we make use of an image-charge-corrected barrier height, , in Eq. (14), as first suggested by Emtage and O'Dwyer, 20…”

Section: B One-dimensional Continuum Drift-diffusion Modelmentioning

confidence: 99%

“…8,10 In order to investigate the consistency of this approach and to study the injection of carriers in more detail, we recently performed a computational study of single-carrier devices by solving the Pauli master equation for a collection of sites representing a full three-dimensional (3D) device, including its electrodes. 15 The DOS was taken to be Gaussian and to be spatially uncorrelated, corresponding to the EGDM. The effects of space charge, the image-charge potential, and an injection barrier were taken into account.…”

Section: Introductionmentioning

confidence: 99%

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Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

et al. 2011

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Section: Introductionsupporting

confidence: 79%

Section: Introductionmentioning

confidence: 55%

Section: A Monte Carlo Methodsmentioning

confidence: 99%

“…As in Ref. 15 we make use of an image-charge-corrected barrier height, , in Eq. (14), as first suggested by Emtage and O'Dwyer, 20…”

Section: B One-dimensional Continuum Drift-diffusion Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

et al. 2011

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Electronic and Optical Processes of Organic Semiconductors

Köhler

Bäßler

2015

Electronic Processes in Organic Semiconductors

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Semiconductors are, by definition, materials that are intended for use in optoelectronic devices. The most common applications of organic semiconductors encompass organic light-emitting diodes (OLEDs), organic solar cells (OSCs), and organic field-effect transistors (OFETs) (Figure 3.1).In essence, an OLED is made in a sandwich-type structure by covering a substrate sequentially with a bottom electrode, the active semiconducting material and a top electrode. Upon applying a voltage, positive and negative charges are injected from the electrodes into the semiconductor and move through it. While a part of these charges may leave the organic film at the counter electrode, having resulted in nothing but dissipated heat, some of the electrons and holes will encounter and capture each other to form an excited state that may recombine with or without light emission. The processes involved in the operation of an OLED are illustrated in Figure 3.1, along with the processes relevant for an OSC. The OSC has, in principle, the same structure as that of an OLED; yet, it operates in the reverse direction. Light is absorbed and creates excited states. Some of these states may eventually dissociate into free, mobile positive and negative charges that move to opposite electrodes where they are collected to yield a current. The photophysical mechanisms associated with OLEDs and OSC operation, such as charge injection, charge transport, electron-hole recombination, and excited state dissociation are discussed in detail in the corresponding sections of this chapter. Also included are processes relating to the excited states such as energy transfer and decay mechanisms. Issues pertaining to the fabrication, operation, characterization, and optimization of the entire device are considered in the next chapter. The same approach of chapter organization is taken concerning the OFET. The fabrication and operation of the OFET is detailed in Chapter 4, whereas this chapter covers, inter alia, the process of charge transport for the regimes of low and high charge carrier density.The generic structure of an OFET differs from the OLED/OSC structure. An OFET contains three electrodes in contrast to the two electrodes of the OLED/OSC layout. In the OFET, two electrodes, the source and the drain electrode, are separated by the active semiconductor. When a voltage is applied between the source and the drain electrode, current can, in principle, flow between them. The amount of current that flows is controlled by the third, the gate electrode that is separated from the active semiconductor by an insulator layer. If there is no voltage applied to the gate electrode, the current flow between the source and the drain is negligibly small, even when there is a potential difference between the source and the drain. The reason for this lies in the high resistivity of the organic semiconductor in combination with the device geometry. In an OLED, the electrodes are separated only by 100 nm of semiconductor, and the electrodes cover most of the semiconductor...

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Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies

et al. 2020

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Organic light-emitting diodes (OLEDs) still suffer from limited outcoupling efficiencies. Herein, a novel technology for the enhancement of the outcoupling efficiency of OLED devices is presented. By means of electrospray deposition (ESD), the active hole-transport layer (HTL) is modified to have a reduced effective refractive index due to its porosity. A green-emitting stack is tailored to demonstrate this effect, whereas additional haze effects are to be prevented. The introduction of a low-index HTL results in a more efficient light extraction by a factor of 1.05 showing excellent agreement between experiment and simulation.

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Publisher's Note: Modeling and analysis of the three-dimensional current density in sandwich-type single-carrier devices of disordered organic semiconductors [Phys. Rev. B79, 085203 (2009)]

Abstract: Modeling and analysis of the three-dimensional current density in sandwich-type single-carrier devices of disordered organic semiconductors Holst, J.J.M. van der; Uijttewaal, M.A.; Ramachandhran, B.; Coehoorn, R.; Bobbert, P.A.; de Wijs, G. A. ; Groot, R.A. de

Cited by 41 publications

References 0 publications

Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

Monte Carlo study of charge transport in organic sandwich-type single-carrier devices: Effects of Coulomb interactions

Electronic and Optical Processes of Organic Semiconductors

Low‐Refractive Index Layers in Organic Light‐Emitting Diodes via Electrospray Deposition for Enhanced Outcoupling Efficiencies

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